TY - GEN
T1 - Adhesion and Cu diffusion barrier properties of a MnOx barrier layer formed with thermal MOCVD
AU - Neishi, K.
AU - Dixit, V. K.
AU - Aki, S.
AU - Koike, Junichi
AU - Matsumoto, K.
AU - Sato, H.
AU - Itoh, H.
AU - Hosaka, S.
PY - 2009/12/1
Y1 - 2009/12/1
N2 - A thin and uniform manganese oxide layer was formed below 400 °C by thermal chemical vapor deposition (CVD) on a tetraethylorthosilicate (TEOS) oxide substrate. No Cu delamination were observed both in the as-deposited and in the annealed PVD-Cu/CVD-MnOx/TEOS samples deposited below 300 °C, meanwhile the Cu films were delaminated from the CVD-MnO x/TEOS substrates deposited at 400 °C. From the results of XPS, Raman and SIMS analysis, a major reason for degradation of the adhesion properties is considered to be amount of carbon inclusion in the CVD Mn oxide layer.
AB - A thin and uniform manganese oxide layer was formed below 400 °C by thermal chemical vapor deposition (CVD) on a tetraethylorthosilicate (TEOS) oxide substrate. No Cu delamination were observed both in the as-deposited and in the annealed PVD-Cu/CVD-MnOx/TEOS samples deposited below 300 °C, meanwhile the Cu films were delaminated from the CVD-MnO x/TEOS substrates deposited at 400 °C. From the results of XPS, Raman and SIMS analysis, a major reason for degradation of the adhesion properties is considered to be amount of carbon inclusion in the CVD Mn oxide layer.
UR - http://www.scopus.com/inward/record.url?scp=77649126587&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77649126587&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:77649126587
SN - 9781605111292
SN - 9781605111643
T3 - Materials Research Society Symposium Proceedings
SP - 99
EP - 104
BT - Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009
T2 - 2009 MRS Spring Meeting
Y2 - 13 April 2009 through 17 April 2009
ER -