Adhesion and Cu diffusion barrier properties of a MnOx barrier layer formed with thermal MOCVD

K. Neishi, V. K. Dixit, S. Aki, Junichi Koike, K. Matsumoto, H. Sato, H. Itoh, S. Hosaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A thin and uniform manganese oxide layer was formed below 400 °C by thermal chemical vapor deposition (CVD) on a tetraethylorthosilicate (TEOS) oxide substrate. No Cu delamination were observed both in the as-deposited and in the annealed PVD-Cu/CVD-MnOx/TEOS samples deposited below 300 °C, meanwhile the Cu films were delaminated from the CVD-MnO x/TEOS substrates deposited at 400 °C. From the results of XPS, Raman and SIMS analysis, a major reason for degradation of the adhesion properties is considered to be amount of carbon inclusion in the CVD Mn oxide layer.

Original languageEnglish
Title of host publicationMaterials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009
Pages99-104
Number of pages6
Publication statusPublished - 2009 Dec 1
Event2009 MRS Spring Meeting - San Francisco, CA, United States
Duration: 2009 Apr 132009 Apr 17

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1156
ISSN (Print)0272-9172

Other

Other2009 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period09/4/1309/4/17

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Neishi, K., Dixit, V. K., Aki, S., Koike, J., Matsumoto, K., Sato, H., Itoh, H., & Hosaka, S. (2009). Adhesion and Cu diffusion barrier properties of a MnOx barrier layer formed with thermal MOCVD. In Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009 (pp. 99-104). (Materials Research Society Symposium Proceedings; Vol. 1156).