Abstract
A thin and uniform manganese oxide layer was formed below 400 °C by thermal chemical vapor deposition (CVD) on a tetraethylorthosilicate (TEOS) oxide substrate. No Cu delamination were observed both in the as-deposited and in the annealed PVD-Cu/CVD-MnOx/TEOS samples deposited below 300 °C, meanwhile the Cu films were delaminated from the CVD-MnO x/TEOS substrates deposited at 400 °C. From the results of XPS, Raman and SIMS analysis, a major reason for degradation of the adhesion properties is considered to be amount of carbon inclusion in the CVD Mn oxide layer.
| Original language | English |
|---|---|
| Title of host publication | Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009 |
| Pages | 99-104 |
| Number of pages | 6 |
| Publication status | Published - 2009 Dec 1 |
| Event | 2009 MRS Spring Meeting - San Francisco, CA, United States Duration: 2009 Apr 13 → 2009 Apr 17 |
Publication series
| Name | Materials Research Society Symposium Proceedings |
|---|---|
| Volume | 1156 |
| ISSN (Print) | 0272-9172 |
Other
| Other | 2009 MRS Spring Meeting |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 09/4/13 → 09/4/17 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Neishi, K., Dixit, V. K., Aki, S., Koike, J., Matsumoto, K., Sato, H., Itoh, H., & Hosaka, S. (2009). Adhesion and Cu diffusion barrier properties of a MnOx barrier layer formed with thermal MOCVD. In Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics - 2009 (pp. 99-104). (Materials Research Society Symposium Proceedings; Vol. 1156).