Activities of dislocations in heavily impurity-doped Si

I. Yonenaga

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)

Abstract

The dynamic behaviour of dislocations in heavily impurity-doped Si crystals is investigated. Suppression of the generation of dislocations from a surface scratch is found for Si doped with B and P to a concentration higher than 1×1019 cm-3 and the critical stress for dislocation generation increases with B and P concentration which is interpreted in terms of dislocation locking due to impurity segregation. The velocity of dislocations in B- and P-doped crystals increases with increasing B and P concentration, respectively.

Original languageEnglish
Pages (from-to)10065-10069
Number of pages5
JournalJournal of Physics Condensed Matter
Volume12
Issue number49
DOIs
Publication statusPublished - 2000 Dec 11
EventExtended Defects in Semiconductors 2000 - Brighton, UK
Duration: 2000 Jul 182000 Jul 22

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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