Active‐to‐Passive Transition and Bubble Formation for High‐Temperature Oxidation of Chemically Vapor‐Deposited Silicon Carbide in CO–CO2 Atmosphere

Takayuki Narushima, Takashi Goto, Yoshio Yokoyama, Masahito Takeuchi, Yasutaka Iguchi, Toshio Hirai

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)

Abstract

Oxidation behavior of chemically vapor‐deposited SiC in CO─CO2 atmospheres (0.1 MPa) was investigated using a thermogravimetric technique at temperatures from 1823 to 1923 K. Active or passive oxidation was observed depending on temperature and CO2/CO partial pressure ratio (Pco2/Pco). The critical Pco2/Pco value for the transition was 1O2 times as large as a theoretical value calculated from the Wagner model. In the passive oxidation above 1873 K, SiO2 bubbles were grown. The expansion and rupture of bubbles caused cyclic rapid mass gain and mass loss.

Original languageEnglish
Pages (from-to)1079-1082
Number of pages4
JournalJournal of the American Ceramic Society
Volume77
Issue number4
DOIs
Publication statusPublished - 1994 Jan 1

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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