Activation of a particulate Ta 3 N 5 water-oxidation photoanode with a GaN hole-blocking layer

Yusuke Asakura, Tomohiro Higashi, Hiroshi Nishiyama, Hiroyuki Kobayashi, Mamiko Nakabayashi, Naoya Shibata, Tsutomu Minegishi, Takashi Hisatomi, Masao Katayama, Taro Yamada, Kazunari Domen

    Research output: Contribution to journalArticlepeer-review

    12 Citations (Scopus)

    Abstract

    Particulate Ta 3 N 5 , a material that responds to visible light for photoelectrochemical O 2 evolution, was glued to a metallic GaN conducting layer. The electrode was able to oxidize water with 1.8-fold higher efficiency than that without GaN. The GaN layer blocked the hole current from Ta 3 N 5 to the back-contact metal layer and prevented hole-electron recombination.

    Original languageEnglish
    Pages (from-to)73-78
    Number of pages6
    JournalSustainable Energy and Fuels
    Volume2
    Issue number1
    DOIs
    Publication statusPublished - 2018

    ASJC Scopus subject areas

    • Renewable Energy, Sustainability and the Environment
    • Fuel Technology
    • Energy Engineering and Power Technology

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