Activation energy of oxygen vacancy diffusion of yttria-stabilized-zirconia thin film determined from DC current measurements below 150©C

Naoki Wakiya, Naoya Tajiri, Takanori Kiguchi, Nobuyasu Mizutani, Jeffrey S. Cross, Kazuo Shinozaki

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The current density versus time (J-t) characteristics of yttria-stabilized-zirconia (YSZ) films on Si(001) below 150°C were measured. By the application of a negative voltage up to 20 V to the aluminum top electrode, a current peak was observed. The peak evolution was considered on the basis of the space-charge-limited current transient of oxygen vacancy (model-1), and the modulation of electronic conductivity upon oxygen vacancy redistribution (model-2). From the point of view of the activation energy and the relative dielectric constant estimation, model-2 gave a more plausible value. It was also observed, based on J-t measurements, that Nb-doping causes the suppression of oxygen vacancies.

Original languageEnglish
Pages (from-to)L525-L528
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number20-23
DOIs
Publication statusPublished - 2006 May 19
Externally publishedYes

Keywords

  • Activation energy
  • Dc current measurements
  • Film
  • Yttria-stabilized-zirconia

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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