TY - JOUR
T1 - Activation energy of hydrogen desorption from high-performance titanium oxide carrier-selective contacts with silicon oxide interlayers
AU - Gotoh, Kazuhiro
AU - Mochizuki, Takeya
AU - Hojo, Tomohiko
AU - Shibayama, Yuki
AU - Kurokawa, Yasuyoshi
AU - Akiyama, Eiji
AU - Usami, Noritaka
N1 - Funding Information:
This work was supported by the New Energy and Industrial Technology Development Organization (NEDO) , MEXT; a Grant-in-Aid for Scientific Research on Innovative Areas “Hydrogenomics” (JP18H05514); and the Inter-University Cooperative Research Program of the Institute for Materials Research, Tohoku University (Proposal No. 18K0093 ). The authors thank H. Miura and A. Shimizu for their technical help.
Funding Information:
This work was supported by the New Energy and Industrial Technology Development Organization (NEDO), MEXT; a Grant-in-Aid for Scientific Research on Innovative Areas ?Hydrogenomics? (JP18H05514); and the Inter-University Cooperative Research Program of the Institute for Materials Research, Tohoku University (Proposal No. 18K0093). The authors thank H. Miura and A. Shimizu for their technical help.
Publisher Copyright:
© 2020 Korean Physical Society
PY - 2021/1
Y1 - 2021/1
N2 - The impact of hydrogen desorption on the electrical properties of TiOx on crystalline silicon (c-Si) with SiOy interlayers is studied for the development of high-performance TiOx carrier-selective contacts. Compared with the TiOx/c-Si heterocontacts, a lower surface recombination velocity of 9.6 cm/s and lower contact resistivity of 7.1 mΩ cm2 are obtained by using SiOy interlayers formed by mixture (often called SC2). The hydrogen desorption peaks arising from silicon dihydride (α1) and silicon monohydride (α2) on the c-Si surface of the as-deposited samples are observed. The α1 peak pressure of as-deposited heterocontacts with SiOx interlayers is lower than that of heterocontacts without a SiOy interlayer. Furthermore, the hydrogen desorption energies are found to be 1.76 and 2.13 eV for the TiOx/c-Si and TiOx/SC2-SiOy/c-Si heterocontacts, respectively. Therefore, the excellent passivation of the TiOx/SC2-SiOy/c-Si heterocontacts is ascribed to the relatively high rupture energy of bonding between Si and H atoms.
AB - The impact of hydrogen desorption on the electrical properties of TiOx on crystalline silicon (c-Si) with SiOy interlayers is studied for the development of high-performance TiOx carrier-selective contacts. Compared with the TiOx/c-Si heterocontacts, a lower surface recombination velocity of 9.6 cm/s and lower contact resistivity of 7.1 mΩ cm2 are obtained by using SiOy interlayers formed by mixture (often called SC2). The hydrogen desorption peaks arising from silicon dihydride (α1) and silicon monohydride (α2) on the c-Si surface of the as-deposited samples are observed. The α1 peak pressure of as-deposited heterocontacts with SiOx interlayers is lower than that of heterocontacts without a SiOy interlayer. Furthermore, the hydrogen desorption energies are found to be 1.76 and 2.13 eV for the TiOx/c-Si and TiOx/SC2-SiOy/c-Si heterocontacts, respectively. Therefore, the excellent passivation of the TiOx/SC2-SiOy/c-Si heterocontacts is ascribed to the relatively high rupture energy of bonding between Si and H atoms.
KW - Atomic layer deposition
KW - Hydrogen
KW - Silicon
KW - Surface passivation
KW - Thermal desorption spectroscopy
KW - Titanium oxide
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U2 - 10.1016/j.cap.2020.10.002
DO - 10.1016/j.cap.2020.10.002
M3 - Article
AN - SCOPUS:85094211627
VL - 21
SP - 36
EP - 42
JO - Current Applied Physics
JF - Current Applied Physics
SN - 1567-1739
ER -