Activation energy of hydrogen desorption from high-performance titanium oxide carrier-selective contacts with silicon oxide interlayers

Kazuhiro Gotoh, Takeya Mochizuki, Tomohiko Hojo, Yuki Shibayama, Yasuyoshi Kurokawa, Eiji Akiyama, Noritaka Usami

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

The impact of hydrogen desorption on the electrical properties of TiOx on crystalline silicon (c-Si) with SiOy interlayers is studied for the development of high-performance TiOx carrier-selective contacts. Compared with the TiOx/c-Si heterocontacts, a lower surface recombination velocity of 9.6 cm/s and lower contact resistivity of 7.1 mΩ cm2 are obtained by using SiOy interlayers formed by mixture (often called SC2). The hydrogen desorption peaks arising from silicon dihydride (α1) and silicon monohydride (α2) on the c-Si surface of the as-deposited samples are observed. The α1 peak pressure of as-deposited heterocontacts with SiOx interlayers is lower than that of heterocontacts without a SiOy interlayer. Furthermore, the hydrogen desorption energies are found to be 1.76 and 2.13 eV for the TiOx/c-Si and TiOx/SC2-SiOy/c-Si heterocontacts, respectively. Therefore, the excellent passivation of the TiOx/SC2-SiOy/c-Si heterocontacts is ascribed to the relatively high rupture energy of bonding between Si and H atoms.

Original languageEnglish
Pages (from-to)36-42
Number of pages7
JournalCurrent Applied Physics
Volume21
DOIs
Publication statusPublished - 2021 Jan

Keywords

  • Atomic layer deposition
  • Hydrogen
  • Silicon
  • Surface passivation
  • Thermal desorption spectroscopy
  • Titanium oxide

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

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