Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements

Kazuo Tsutsui, Toru Matsuda, Masamitsu Watanabe, Cheng Guo Jin, Yuichiro Sasaki, Bunji Mizuno, Eiji Ikenaga, Kuniyuki Kakushima, Parhat Ahmet, Takuya Maruizumi, Hiroshi Nohira, Takeo Hattori, Hiroshi Iwai

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41 Citations (Scopus)

Abstract

The chemical bonding states of boron (B) in shallow P+ /N junctions on Si substrates were studied by soft x-ray photoelectron spectroscopy (SXPES). This study revealed three chemical bonding states of B embedded in bulk Si. The concentration profiles of B were successfully determined by combining SXPES with step-by-step etching of Si substrates. The concentration profiles of B thus determined were in good agreement with those determined by secondary ion mass spectroscopy. The concentration profiles of holes were also determined by combining Hall measurements with the step-by-step etching of Si substrates. The concentration profiles of B having the lowest binding energy were found to agree well with the concentration profiles of holes. Therefore, B with the lowest binding energy can be assigned as activated B and those having the middle and highest binding energies can be attributed to deactivated B having chemical bonding states different from that of activated B.

Original languageEnglish
Article number093709
JournalJournal of Applied Physics
Volume104
Issue number9
DOIs
Publication statusPublished - 2008
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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