Acoustic de Haas-van Alphen effect in LaAs

K. Morita, T. Goto, H. Matsui, S. Nakamura, Y. Haga, T. Suzuki, M. Kataoka

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Acoustic de Haas-van Alphen effect of a semi-metallic compound LaAs has been investigated. The electron α Fermi surfaces and the hole β, γ surfaces in LaAs have been observed. The carrier number of LaAs was n = 0.0024 per La atom. The oscillation intensity of the longitudinal C11 mode revealed enhanced values |gii| ≊ 8-16 of the electron-strain coupling constant α and β surfaces in LaAs.

Original languageEnglish
Pages (from-to)795-797
Number of pages3
JournalPhysica B: Physics of Condensed Matter
Volume206-207
Issue numberC
DOIs
Publication statusPublished - 1995 Feb 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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