Accurate prediction of PBTI lifetime for N-type fin-channel tunnel FETs

W. Mizubayashi; T. Mori; K. Fukuda; Y. X. Liu; T. Matsukawa; Y. Ishikawa; K. Endo; S. O'Uchi; J. Tsukada; H. Yamauchi; Y. Morita; S. Migita; H. Ota; M. Masahara

doi:10.1109/IEDM.2014.7047167

Accurate prediction of PBTI lifetime for N-type fin-channel tunnel FETs

W. Mizubayashi, T. Mori, K. Fukuda, Y. X. Liu, T. Matsukawa, Y. Ishikawa, K. Endo, S. O'Uchi, J. Tsukada, H. Yamauchi, Y. Morita, S. Migita, H. Ota, M. Masahara

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4 Citations (Scopus)

Abstract

The positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel FETs (TFETs) with high-k gate stacks have been thoroughly investigated and compared with conventional FinFETs. The subthreshold slope (SS) is not degraded at all while the threshold voltage (V_th) shifts in the positive direction by the PBTI stress. The activation energy of ΔVth for TFETs is almost the same as FinFETs, indicating that the PBTI mechanism for TFETs is almost the same as FinFETs. It was found that, by applying a positive bias to the n⁺-drain (normal operation condition), the PBTI lifetime is dramatically improved as compared with that in the conventional stress test (both the p⁺-source and n⁺-drain are grounded). This is because carrier injection from the n⁺-drain is the main cause of the PBTI, especially for n-type TFETs. Thus, the realistic impact of the PBTI is significantly mitigated for n-type TFETs.

Original language	English
Article number	7047167
Pages (from-to)	34.3.1-34.3.4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2015-February
Issue number	February
DOIs	https://doi.org/10.1109/IEDM.2014.7047167
Publication status	Published - 2015 Feb 20
Externally published	Yes
Event	2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States Duration: 2014 Dec 15 → 2014 Dec 17

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1109/IEDM.2014.7047167

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Mizubayashi, W., Mori, T., Fukuda, K., Liu, Y. X., Matsukawa, T., Ishikawa, Y., Endo, K., O'Uchi, S., Tsukada, J., Yamauchi, H., Morita, Y., Migita, S., Ota, H., & Masahara, M. (2015). Accurate prediction of PBTI lifetime for N-type fin-channel tunnel FETs. Technical Digest - International Electron Devices Meeting, IEDM, 2015-February(February), 34.3.1-34.3.4. [7047167]. https://doi.org/10.1109/IEDM.2014.7047167

Mizubayashi, W, Mori, T, Fukuda, K, Liu, YX, Matsukawa, T, Ishikawa, Y, Endo, K, O'Uchi, S, Tsukada, J, Yamauchi, H, Morita, Y, Migita, S, Ota, H & Masahara, M 2015, 'Accurate prediction of PBTI lifetime for N-type fin-channel tunnel FETs', Technical Digest - International Electron Devices Meeting, IEDM, vol. 2015-February, no. February, 7047167, pp. 34.3.1-34.3.4. https://doi.org/10.1109/IEDM.2014.7047167

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abstract = "The positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel FETs (TFETs) with high-k gate stacks have been thoroughly investigated and compared with conventional FinFETs. The subthreshold slope (SS) is not degraded at all while the threshold voltage (Vth) shifts in the positive direction by the PBTI stress. The activation energy of ΔVth for TFETs is almost the same as FinFETs, indicating that the PBTI mechanism for TFETs is almost the same as FinFETs. It was found that, by applying a positive bias to the n+-drain (normal operation condition), the PBTI lifetime is dramatically improved as compared with that in the conventional stress test (both the p+-source and n+-drain are grounded). This is because carrier injection from the n+-drain is the main cause of the PBTI, especially for n-type TFETs. Thus, the realistic impact of the PBTI is significantly mitigated for n-type TFETs.",

author = "W. Mizubayashi and T. Mori and K. Fukuda and Liu, {Y. X.} and T. Matsukawa and Y. Ishikawa and K. Endo and S. O'Uchi and J. Tsukada and H. Yamauchi and Y. Morita and S. Migita and H. Ota and M. Masahara",

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T1 - Accurate prediction of PBTI lifetime for N-type fin-channel tunnel FETs

AU - Mizubayashi, W.

AU - Mori, T.

AU - Fukuda, K.

AU - Liu, Y. X.

AU - Matsukawa, T.

AU - Ishikawa, Y.

AU - Endo, K.

AU - O'Uchi, S.

AU - Tsukada, J.

AU - Yamauchi, H.

AU - Morita, Y.

AU - Migita, S.

AU - Ota, H.

AU - Masahara, M.

PY - 2015/2/20

Y1 - 2015/2/20

N2 - The positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel FETs (TFETs) with high-k gate stacks have been thoroughly investigated and compared with conventional FinFETs. The subthreshold slope (SS) is not degraded at all while the threshold voltage (Vth) shifts in the positive direction by the PBTI stress. The activation energy of ΔVth for TFETs is almost the same as FinFETs, indicating that the PBTI mechanism for TFETs is almost the same as FinFETs. It was found that, by applying a positive bias to the n+-drain (normal operation condition), the PBTI lifetime is dramatically improved as compared with that in the conventional stress test (both the p+-source and n+-drain are grounded). This is because carrier injection from the n+-drain is the main cause of the PBTI, especially for n-type TFETs. Thus, the realistic impact of the PBTI is significantly mitigated for n-type TFETs.

AB - The positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel FETs (TFETs) with high-k gate stacks have been thoroughly investigated and compared with conventional FinFETs. The subthreshold slope (SS) is not degraded at all while the threshold voltage (Vth) shifts in the positive direction by the PBTI stress. The activation energy of ΔVth for TFETs is almost the same as FinFETs, indicating that the PBTI mechanism for TFETs is almost the same as FinFETs. It was found that, by applying a positive bias to the n+-drain (normal operation condition), the PBTI lifetime is dramatically improved as compared with that in the conventional stress test (both the p+-source and n+-drain are grounded). This is because carrier injection from the n+-drain is the main cause of the PBTI, especially for n-type TFETs. Thus, the realistic impact of the PBTI is significantly mitigated for n-type TFETs.

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Accurate prediction of PBTI lifetime for N-type fin-channel tunnel FETs

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