Accurate prediction of PBTI lifetime for N-type fin-channel tunnel FETs

W. Mizubayashi, T. Mori, K. Fukuda, Y. X. Liu, T. Matsukawa, Y. Ishikawa, K. Endo, S. O'Uchi, J. Tsukada, H. Yamauchi, Y. Morita, S. Migita, H. Ota, M. Masahara

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


The positive bias temperature instability (PBTI) characteristics for n-type fin-channel tunnel FETs (TFETs) with high-k gate stacks have been thoroughly investigated and compared with conventional FinFETs. The subthreshold slope (SS) is not degraded at all while the threshold voltage (Vth) shifts in the positive direction by the PBTI stress. The activation energy of ΔVth for TFETs is almost the same as FinFETs, indicating that the PBTI mechanism for TFETs is almost the same as FinFETs. It was found that, by applying a positive bias to the n+-drain (normal operation condition), the PBTI lifetime is dramatically improved as compared with that in the conventional stress test (both the p+-source and n+-drain are grounded). This is because carrier injection from the n+-drain is the main cause of the PBTI, especially for n-type TFETs. Thus, the realistic impact of the PBTI is significantly mitigated for n-type TFETs.

Original languageEnglish
Article number7047167
Pages (from-to)34.3.1-34.3.4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
Issue numberFebruary
Publication statusPublished - 2015 Feb 20
Externally publishedYes
Event2014 60th IEEE International Electron Devices Meeting, IEDM 2014 - San Francisco, United States
Duration: 2014 Dec 152014 Dec 17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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