Accurate nano-EB lithography for 40-nm gate MOSFETs

Y. Ochiai, S. Manako, S. Samukawa, K. Takeuchi, T. Yamamoto

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

Nanometer electron beam lithography has been used for fabrication of sub-0.1 μm MOSFETs. Chemically amplified resist as a single layer mask showed high resolution by optimizing the resist process. Proximity effect correction was applied and showed a good line width control. Operation of a 40nm-polysilicon gate NMOSFET was confirmed.

Original languageEnglish
Pages (from-to)415-418
Number of pages4
JournalMicroelectronic Engineering
Volume30
Issue number1-4
DOIs
Publication statusPublished - 1996 Jan
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Accurate nano-EB lithography for 40-nm gate MOSFETs'. Together they form a unique fingerprint.

Cite this