Accurate model of subbreakdown due to band-to-band tunneling and its application

R. Shirota, T. Endoh, M. Momodomi, R. Nakayama, S. Inoue, R. Kirisawa, F. Masuoka

Research output: Contribution to journalConference article

30 Citations (Scopus)

Abstract

The authors describe a novel accurate model and numerical analysis of subbreakdown phenomena due to band-to-band tunneling in a thin-gate-oxide n-MOSFET. Subbreakdown I-V characteristics are calculated for various oxide thicknesses. The results agree with experimental results over a wide range of subbreakdown current from 10-12 A to 10-6 A. The numerical analysis based on this model has been utilized to suppress the subbreakdown current. It is concluded that the model can be utilized for the design of thin-gate-oxide devices.

Original languageEnglish
Pages (from-to)26-29
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1988 Dec 1
Externally publishedYes
EventTechnical Digest - International Electron Devices Meeting 1988 - San Francisco, CA, USA
Duration: 1988 Dec 111988 Dec 14

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Accurate model of subbreakdown due to band-to-band tunneling and its application'. Together they form a unique fingerprint.

  • Cite this

    Shirota, R., Endoh, T., Momodomi, M., Nakayama, R., Inoue, S., Kirisawa, R., & Masuoka, F. (1988). Accurate model of subbreakdown due to band-to-band tunneling and its application. Technical Digest - International Electron Devices Meeting, 26-29.