Accurate measurement of EUV multilayer period thicknesses by in situ automatic ellipsometry

T. Tsuru; T. Tsutou; T. Hatano; M. Yamamoto

doi:10.1016/j.elspec.2005.01.087

Accurate measurement of EUV multilayer period thicknesses by in situ automatic ellipsometry

T. Tsuru, T. Tsutou, T. Hatano, M. Yamamoto

Center for Advanced Microscopy and Spectroscopy

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

All layer thicknesses of a 40 periods EUV multilayer composed of Mo and Si with a designed period thickness of 6.918 nm were measured by our in situ ellipsometry. The period thickness of Mo/Si multilayer was obtained to be 7.07 nm in average. This coincides well with period thicknesses of 7.078 and 7.081 nm as determined respectively by EUV reflectometry and X-ray diffractometry after fabrication. The difference of 0.01 nm, which is as to be 0.14%, is sufficiently small for precise period thickness control of EUV multilayer fabrication.

Original language	English
Pages (from-to)	1083-1085
Number of pages	3
Journal	Journal of Electron Spectroscopy and Related Phenomena
Volume	144-147
DOIs	https://doi.org/10.1016/j.elspec.2005.01.087
Publication status	Published - 2005 Jun 1

Keywords

EUV multilayer
Ellipsometry
Layer-by-layer analysis
Rate monitoring

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Radiation
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Spectroscopy
Physical and Theoretical Chemistry

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title = "Accurate measurement of EUV multilayer period thicknesses by in situ automatic ellipsometry",

abstract = "All layer thicknesses of a 40 periods EUV multilayer composed of Mo and Si with a designed period thickness of 6.918 nm were measured by our in situ ellipsometry. The period thickness of Mo/Si multilayer was obtained to be 7.07 nm in average. This coincides well with period thicknesses of 7.078 and 7.081 nm as determined respectively by EUV reflectometry and X-ray diffractometry after fabrication. The difference of 0.01 nm, which is as to be 0.14%, is sufficiently small for precise period thickness control of EUV multilayer fabrication.",

keywords = "EUV multilayer, Ellipsometry, Layer-by-layer analysis, Rate monitoring",

author = "T. Tsuru and T. Tsutou and T. Hatano and M. Yamamoto",

year = "2005",

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doi = "10.1016/j.elspec.2005.01.087",

language = "English",

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T1 - Accurate measurement of EUV multilayer period thicknesses by in situ automatic ellipsometry

AU - Tsuru, T.

AU - Tsutou, T.

AU - Hatano, T.

AU - Yamamoto, M.

PY - 2005/6/1

Y1 - 2005/6/1

N2 - All layer thicknesses of a 40 periods EUV multilayer composed of Mo and Si with a designed period thickness of 6.918 nm were measured by our in situ ellipsometry. The period thickness of Mo/Si multilayer was obtained to be 7.07 nm in average. This coincides well with period thicknesses of 7.078 and 7.081 nm as determined respectively by EUV reflectometry and X-ray diffractometry after fabrication. The difference of 0.01 nm, which is as to be 0.14%, is sufficiently small for precise period thickness control of EUV multilayer fabrication.

AB - All layer thicknesses of a 40 periods EUV multilayer composed of Mo and Si with a designed period thickness of 6.918 nm were measured by our in situ ellipsometry. The period thickness of Mo/Si multilayer was obtained to be 7.07 nm in average. This coincides well with period thicknesses of 7.078 and 7.081 nm as determined respectively by EUV reflectometry and X-ray diffractometry after fabrication. The difference of 0.01 nm, which is as to be 0.14%, is sufficiently small for precise period thickness control of EUV multilayer fabrication.

KW - EUV multilayer

KW - Ellipsometry

KW - Layer-by-layer analysis

KW - Rate monitoring

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JO - Journal of Electron Spectroscopy and Related Phenomena

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