Accurate extraction of conduction parameter in MOSFETs on Si(110) surface

P. Gaubert, A. Teramoto, T. Hamada, T. Suwa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper reports for the first time the intrinsic mobility attenuation factor for p-channel MOSFETs fabricated on (110) crystallographic oriented silicon. It has been demonstrated that some extraction methods working well for the conventional orientation cannot be applied anymore when it comes to the (110) orientation. The intrinsic attenuation factor found for the new orientation is ten times smaller than for the conventional one. Then the channel mobility of Si(110) p-MOSFETs is much less sensitive to the effective electric field variations than the Si(100) p-MOSFETs meaning that the shift to higher effective electric field coming from a higher doping concentration in the channel will affect in much less proportion the hole mobility of p-MOSFETs based on (110) oriented silicon.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Pages1393-1394
Number of pages2
DOIs
Publication statusPublished - 2007 Dec 1
Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna, Austria
Duration: 2006 Jul 242006 Jul 28

Publication series

NameAIP Conference Proceedings
Volume893
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other28th International Conference on the Physics of Semiconductors, ICPS 2006
CountryAustria
CityVienna
Period06/7/2406/7/28

Keywords

  • MOS transistor
  • Mobility
  • Mobility attenuation factor
  • Silicon
  • Surface orientation

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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