Accurate determination of SiO2 film thickness by x-ray photoelectron spectroscopy

K. Takahashi, H. Nohira, K. Hirose, T. Hattori

    Research output: Contribution to journalArticlepeer-review

    38 Citations (Scopus)

    Abstract

    The SiO2 film thickness was determined using x-ray photoelectron spectroscopy. Monte Carlo simulation was used to determine the elastic and inelastic scattering of Si2p photoelectrons in silicon oxide. It was found that elastic scattering of Si2p photoelectrons in silicon oxide could be effectively neglected in several specific directions.

    Original languageEnglish
    Pages (from-to)3422-3424
    Number of pages3
    JournalApplied Physics Letters
    Volume83
    Issue number16
    DOIs
    Publication statusPublished - 2003 Oct 20

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Fingerprint Dive into the research topics of 'Accurate determination of SiO<sub>2</sub> film thickness by x-ray photoelectron spectroscopy'. Together they form a unique fingerprint.

    Cite this