Abstract
The SiO2 film thickness was determined using x-ray photoelectron spectroscopy. Monte Carlo simulation was used to determine the elastic and inelastic scattering of Si2p photoelectrons in silicon oxide. It was found that elastic scattering of Si2p photoelectrons in silicon oxide could be effectively neglected in several specific directions.
Original language | English |
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Pages (from-to) | 3422-3424 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 16 |
DOIs | |
Publication status | Published - 2003 Oct 20 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)