Accurate determination of SiO2 film thickness by x-ray photoelectron spectroscopy

K. Takahashi; H. Nohira; K. Hirose; T. Hattori

doi:10.1063/1.1616204

Accurate determination of SiO₂ film thickness by x-ray photoelectron spectroscopy

K. Takahashi, H. Nohira, K. Hirose, T. Hattori

Research output: Contribution to journal › Article › peer-review

38 Citations (Scopus)

Abstract

The SiO₂ film thickness was determined using x-ray photoelectron spectroscopy. Monte Carlo simulation was used to determine the elastic and inelastic scattering of Si2p photoelectrons in silicon oxide. It was found that elastic scattering of Si2p photoelectrons in silicon oxide could be effectively neglected in several specific directions.

Original language	English
Pages (from-to)	3422-3424
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	16
DOIs	https://doi.org/10.1063/1.1616204
Publication status	Published - 2003 Oct 20

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1616204

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title = "Accurate determination of SiO2 film thickness by x-ray photoelectron spectroscopy",

abstract = "The SiO2 film thickness was determined using x-ray photoelectron spectroscopy. Monte Carlo simulation was used to determine the elastic and inelastic scattering of Si2p photoelectrons in silicon oxide. It was found that elastic scattering of Si2p photoelectrons in silicon oxide could be effectively neglected in several specific directions.",

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