Accurate circuit performance prediction model and lifetime prediction method of NBT stressed devices for highly reliable ULSI circuits

Rihito Kuroda, Kazufumi Watanabe, Akinobu Teramoto, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An accurate circuit performance prediction model and a device lifetime prediction method of negative bias temperature (NBT) stressed devices are proposed in this paper. The proposed model is constituted of a threshold voltage (Vth) shift and a drain current (ID) reduction. The models can directly link the electrical characteristics degradation to the circuit simulation, thus enable us to design highly reliable ULSI circuits. The circuit performance prediction is confirmed by the experimental data of the oscillation frequency degradation and waveform variation of ring oscillator. The simulation results are in good agreement with the experimental results. Since only a suitable acceleration method allows us to develop the accurate models, the new negative bias temperature instability (NBTI) acceleration method using cold-holes is also developed. The very small saturation value of Vth shift (<10mV) is observed. The detail of this physics is discussed in this paper. Finally, we demonstrate the accurate NBTI lifetime prediction using the new method.

Original languageEnglish
Title of host publicationIEEE International Electron Devices Meeting, 2005 IEDM - Technical Digest
Pages700-703
Number of pages4
Publication statusPublished - 2005 Dec 1
EventIEEE International Electron Devices Meeting, 2005 IEDM - Washington, DC, MD, United States
Duration: 2005 Dec 52005 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2005
ISSN (Print)0163-1918

Other

OtherIEEE International Electron Devices Meeting, 2005 IEDM
CountryUnited States
CityWashington, DC, MD
Period05/12/505/12/7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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