Accurate circuit performance prediction model and lifetime prediction method of NBT stressed devices for highly reliable ULSI circuits

Rihito Kuroda, Kazufumi Watanabe, Akinobu Teramoto, Michihiko Mifuji, Takahisa Yamaha, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

An accurate circuit level prediction model for predicting performance degradation due to negative bias temperature (NET) stress and a device lifetime prediction method are proposed in this paper. The proposed model consists of a threshold voltage (Vth) shift and a drain current (ID) reducticn models. The developed models are incorporated into a compact MOSFET model so that we can directly link the device electrical degradation to the circuit simulation. The validity of the developed models is confirmed by the experimental results of I-V characteristics of pMOSFET before and after stress. Then, the circuit performance prediction is carried out for a 199-stage ring oscillator on its waveform and oscillation frequency. Excellent agreements between experimental results and predicted results are obtained. Since only a suitable acceleration method allows us to develop the accurate models, the new negative bias temperature instability (NBTI) acceleration method using cold-holes is also developed. Filially, we demonstrate the accurate NBTI lifetime prediction using the method.

Original languageEnglish
Title of host publication2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06
PublisherIEEE Computer Society
ISBN (Print)1424400988, 9781424400980
DOIs
Publication statusPublished - 2006
Event Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference - Padova, Italy
Duration: 2006 May 242006 May 26

Publication series

Name2006 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT'06

Conference

Conference Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference
CountryItaly
CityPadova
Period06/5/2406/5/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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