Accumulation and depletion layer thicknesses in organic field effect transistors

Manabu Kiguchi, Manabu Nakayama, Kohei Fujiwara, Keiji Ueno, Toshihiro Shimada, Koichiro Saiki

Research output: Contribution to journalLetterpeer-review

98 Citations (Scopus)

Abstract

We present a simple but powerful method to determine the thicknesses of the accumulation and depletion layers and the distribution curve of injected carriers in organic field effect transistors. The conductivity of organic semiconductors in thin film transistors was measured in situ and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. Using this method, the thicknesses of the accumulation and depletion layers of pentacene were determined to be 0.9 nm (VG= - 15 V) and 5 nm (VG=15 V), respectively.

Original languageEnglish
Pages (from-to)L1408-L1410
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number12 A
DOIs
Publication statusPublished - 2003 Dec 1
Externally publishedYes

Keywords

  • Accumulation layer
  • Depletion layer
  • Field effect transistor
  • Organic film

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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