TY - JOUR
T1 - Accessing the transport properties of graphene and its multilayers at high carrier density
AU - Ye, Jianting
AU - Craciun, Monica F.
AU - Koshino, Mikito
AU - Russo, Saverio
AU - Inouea, Seiji
AU - Yuan, Hongtao
AU - Shimotani, Hidekazu
AU - Morpurgo, Alberto F.
AU - Iwasa, Yoshihiro
PY - 2011/8/9
Y1 - 2011/8/9
N2 - We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric double-layer transistors to continuously tune the carrier density up to values exceeding 1014 cm-2. Whereas in monolayer the conductivity saturates, in bi- and trilayer filling of the higher-energy bands is observed to cause a nonmonotonic behavior of the conductivity and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.
AB - We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric double-layer transistors to continuously tune the carrier density up to values exceeding 1014 cm-2. Whereas in monolayer the conductivity saturates, in bi- and trilayer filling of the higher-energy bands is observed to cause a nonmonotonic behavior of the conductivity and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.
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U2 - 10.1073/pnas.1018388108
DO - 10.1073/pnas.1018388108
M3 - Article
C2 - 21828007
AN - SCOPUS:80052001762
SN - 0027-8424
VL - 108
SP - 13002
EP - 13006
JO - Proceedings of the National Academy of Sciences of the United States of America
JF - Proceedings of the National Academy of Sciences of the United States of America
IS - 32
ER -