Ac susceptibility of (Ga,Mn)As probed by the anomalous Hall effect

Y. Nishitani, D. Chiba, F. Matsukura, H. Ohno

Research output: Contribution to journalArticlepeer-review

Abstract

ac susceptibility of a ferromagnetic semiconductor (Ga,Mn)As was measured using microscaled Hall bar through the anomalous Hall effect. The synchronous component of the Hall resistance with applied ac magnetic field (∼1 mT) was detected using a lock-in technique. The temperature dependence of the ac Hall resistance shows a clear peak in the vicinity of the Curie temperature TC, when an offset dc field, whose magnitude is comparable to that of the ac field, is superimposed. We applied this method to detect the change of TC as a function of hole concentration by applying electric fields.

Original languageEnglish
Article number07C516
JournalJournal of Applied Physics
Volume105
Issue number7
DOIs
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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