A.C. electrical conduction and transport number measurements for defect-perovskite LaTa3O9

Takashi Goto; Chun wei Chen; Toshio Hirai

A.C. electrical conduction and transport number measurements for defect-perovskite LaTa₃O₉

Takashi Goto, Chun wei Chen, Toshio Hirai

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A.C. electrical properties of defect-perovskite LaTa₃O₉ were measured in the temperature range between 423 and 1073K under oxygen partial pressures (P_O(2)) from 10Pa to 0.1MPa. Complex impedance spectra showed three dispersions associated with bulk, surface layer and a diffusion (Warburg) process. The conductivity of bulk was independent of P_O(2) and its activation energy was 0.40 to 0.48eV. The capacitance of bulk was 5 to 8pF and independent of temperature. The conductivity of surface layer (σ₂) increased with increasing P_O(2) as expressed by σ₂ ∝ P_O(2)ⁿ (n = 0.14 to 0.18). The capacitance of surface layer increased from 3 to 20nF and increased with increasing temperature. The ionic transport number measured with an oxygen concentration cell was nearly 1 at 750K, and decreased with increasing temperature.

Original language	English
Pages (from-to)	49-52
Number of pages	4
Journal	Journal of the Ceramic Society of Japan. International ed.
Volume	103
Issue number	1
Publication status	Published - 1995 Jan 1

ASJC Scopus subject areas

Engineering(all)

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abstract = "A.C. electrical properties of defect-perovskite LaTa3O9 were measured in the temperature range between 423 and 1073K under oxygen partial pressures (PO(2)) from 10Pa to 0.1MPa. Complex impedance spectra showed three dispersions associated with bulk, surface layer and a diffusion (Warburg) process. The conductivity of bulk was independent of PO(2) and its activation energy was 0.40 to 0.48eV. The capacitance of bulk was 5 to 8pF and independent of temperature. The conductivity of surface layer (σ2) increased with increasing PO(2) as expressed by σ2 ∝ PO(2)n (n = 0.14 to 0.18). The capacitance of surface layer increased from 3 to 20nF and increased with increasing temperature. The ionic transport number measured with an oxygen concentration cell was nearly 1 at 750K, and decreased with increasing temperature.",

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T1 - A.C. electrical conduction and transport number measurements for defect-perovskite LaTa3O9

AU - Goto, Takashi

AU - Chen, Chun wei

AU - Hirai, Toshio

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Y1 - 1995/1/1

N2 - A.C. electrical properties of defect-perovskite LaTa3O9 were measured in the temperature range between 423 and 1073K under oxygen partial pressures (PO(2)) from 10Pa to 0.1MPa. Complex impedance spectra showed three dispersions associated with bulk, surface layer and a diffusion (Warburg) process. The conductivity of bulk was independent of PO(2) and its activation energy was 0.40 to 0.48eV. The capacitance of bulk was 5 to 8pF and independent of temperature. The conductivity of surface layer (σ2) increased with increasing PO(2) as expressed by σ2 ∝ PO(2)n (n = 0.14 to 0.18). The capacitance of surface layer increased from 3 to 20nF and increased with increasing temperature. The ionic transport number measured with an oxygen concentration cell was nearly 1 at 750K, and decreased with increasing temperature.

AB - A.C. electrical properties of defect-perovskite LaTa3O9 were measured in the temperature range between 423 and 1073K under oxygen partial pressures (PO(2)) from 10Pa to 0.1MPa. Complex impedance spectra showed three dispersions associated with bulk, surface layer and a diffusion (Warburg) process. The conductivity of bulk was independent of PO(2) and its activation energy was 0.40 to 0.48eV. The capacitance of bulk was 5 to 8pF and independent of temperature. The conductivity of surface layer (σ2) increased with increasing PO(2) as expressed by σ2 ∝ PO(2)n (n = 0.14 to 0.18). The capacitance of surface layer increased from 3 to 20nF and increased with increasing temperature. The ionic transport number measured with an oxygen concentration cell was nearly 1 at 750K, and decreased with increasing temperature.

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