Absolute coverage of K on the Si(111)-3×1-K surface

Tomihiro Hashizume, Mitsuhiro Katayama, Dong Ryul Jeon, Masakazu Aono, Toshio Sakurai

Research output: Contribution to journalArticlepeer-review

49 Citations (Scopus)

Abstract

The absolute coverage of K on the Si(111)-3×1-K surface which was prepared by deposition of K on the 420 °C Si substrate was determined, by using coaxial impact-collision ion scattering spectroscopy, to be 0.29±0.03 ML. This result rules out the possibility that the 3×1-K phase is formed by K impurity stabilization claimed by several groups. Another important implication of this result is that K atoms of the 3×1 overlayer are not imaged bright in the STM.

Original languageEnglish
Pages (from-to)L1263-L1265
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume32
Issue number9 A
DOIs
Publication statusPublished - 1993 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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