It is shown that InP MISFETs are virtually free from the side-gating effect under normal dark operating condition. In order to understand the difference in the side-gating behavior of InP MISFETs and GaAs MESFETs, a detailed study on the surface I-V characteristics was carried out. It is concluded that the difference is because of the low surface state density in InP.
|Title of host publication||Conference on Solid State Devices and Materials|
|Publisher||Japan Soc of Applied Physics|
|Number of pages||4|
|Publication status||Published - 1985 Dec 1|
|Name||Conference on Solid State Devices and Materials|
ASJC Scopus subject areas