Absence of growth sequence dependence of AlAs/GaAs heterojunction band discontinuity determined by x-ray photoelectron spectroscopy

H. Ohnoc, H. Ishii, K. Matsuzaki, H. Hasegawa

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Systematic in situ XPS measurements on molecular beam epitaxially grown AlAs/GaAs (AlAs grown on GaAs) and reversed GaAs/AlAs heterojunctions have revealed that the growth sequence dependence of the heterojunction valence band discontinuity ΔEv is a measurement artifact. This artifact arises from the strong surface band bending caused by the heavy doping. By reduction of doping, thereby reducing the effect of band bending, commutativity (i.e. no growth sequence dependence) of ΔEv in the GaAs-AlAs system is shown to be satisfied within the experimental error.

Original languageEnglish
Pages (from-to)367-370
Number of pages4
JournalJournal of Crystal Growth
Volume95
Issue number1-4
DOIs
Publication statusPublished - 1989 Feb 2
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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