TY - JOUR
T1 - Absence of growth sequence dependence of AlAs/GaAs heterojunction band discontinuity determined by x-ray photoelectron spectroscopy
AU - Ohnoc, H.
AU - Ishii, H.
AU - Matsuzaki, K.
AU - Hasegawa, H.
PY - 1989/2/2
Y1 - 1989/2/2
N2 - Systematic in situ XPS measurements on molecular beam epitaxially grown AlAs/GaAs (AlAs grown on GaAs) and reversed GaAs/AlAs heterojunctions have revealed that the growth sequence dependence of the heterojunction valence band discontinuity ΔEv is a measurement artifact. This artifact arises from the strong surface band bending caused by the heavy doping. By reduction of doping, thereby reducing the effect of band bending, commutativity (i.e. no growth sequence dependence) of ΔEv in the GaAs-AlAs system is shown to be satisfied within the experimental error.
AB - Systematic in situ XPS measurements on molecular beam epitaxially grown AlAs/GaAs (AlAs grown on GaAs) and reversed GaAs/AlAs heterojunctions have revealed that the growth sequence dependence of the heterojunction valence band discontinuity ΔEv is a measurement artifact. This artifact arises from the strong surface band bending caused by the heavy doping. By reduction of doping, thereby reducing the effect of band bending, commutativity (i.e. no growth sequence dependence) of ΔEv in the GaAs-AlAs system is shown to be satisfied within the experimental error.
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U2 - 10.1016/0022-0248(89)90420-X
DO - 10.1016/0022-0248(89)90420-X
M3 - Article
AN - SCOPUS:0024605712
SN - 0022-0248
VL - 95
SP - 367
EP - 370
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -