Abrupt Si/Ge interface formation using atomic hydrogen in Si molecular beam epitaxy

G. Ohta, S. Fukatsu, Y. Ebuchi, Takeo Hattori, N. Usami, Y. Shiraki

    Research output: Contribution to journalArticlepeer-review

    48 Citations (Scopus)

    Abstract

    Compositional abruptness of strained Si/Ge heterointerfaces grown by solid source Si molecular beam epitaxy under supply of atomic hydrogen (AH) was investigated using secondary ion mass spectrometry and reflection high-energy electron diffraction. Systematic variation of growth temperature and AH exposure pressure revealed that Ge segregation length is a steadily decreasing function of AH coverage on the growth surface.

    Original languageEnglish
    Pages (from-to)2975-2977
    Number of pages3
    JournalApplied Physics Letters
    Volume65
    Issue number23
    DOIs
    Publication statusPublished - 1994 Dec 1

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Fingerprint Dive into the research topics of 'Abrupt Si/Ge interface formation using atomic hydrogen in Si molecular beam epitaxy'. Together they form a unique fingerprint.

    Cite this