Abrupt and arbitrary profile formation in silicon using a low-kinetic-energy ion bombardment process

Wataru Shindo, Masaki Hirayama, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We have discovered that the carrier concentration in an epitaxial silicon film formed by the low-energy ion bombardment process is easily controlled by changing the ion bombardment energy during the film growth. While maintaining the perfect crystallinity of an epitaxial silicon layer grown at a temperature as low as 350°C, an arbitrary-shaped carrier concentration profile has been created in the film. Formation of box-shaped profiles as well as staircase-shaped profiles having very abrupt transitions is demonstrated. Formation of such arbitrary-shaped carrier profiles in an epitaxial layer is quite essential in the design of ultrasmall-dimension devices. The stability of carrier profiles against heat treatments also has been investigated.

Original languageEnglish
Pages (from-to)800-803
Number of pages4
JournalJapanese journal of applied physics
Volume34
Issue number2S
DOIs
Publication statusPublished - 1995 Feb

Keywords

  • Carrier concentration
  • Epitaxy
  • Ion bombardment
  • Low temperature
  • Profile
  • Silicon
  • Sputtering

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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