Above-complementary metal-oxide-semiconductor metal pattern technique for postfabrication tuning of on-chip inductor characteristics

Koji Kotani, Atsuo Sugimoto, Yutaka Omiya, Takashi Ito

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

In the design of radio frequency (RF) circuits, modifying the characteristics of an inductor in efficient way is required to realize rapid prototyping of RF system-on-a-chip (SoC). We propose an above-complementary- metal-oxide-semiconductor (above-CMOS) metal pattern technique. In this technique, metal patterns are formed using a simple process on the passivation layer above the on-chip inductor. Since the metal pattern with different shapes has different effects, we can tune the characteristics of an on-chip inductor by forming various metal patterns in a chip-by-chip manner. This method can experimentally create various inductors from an identical on-chip inductor. Therefore, the optimization of inductor characteristics and related circuit performance can be carried out in a short period and at a low cost on a trial-and-error basis, which is very effective for rapid prototyping of RF SoCs. Adjustment of the oscillation frequency of the voltage-controlled oscillator using this technique and the technique of modeling the above-CMOS metal pattern are also described in this paper.

Original languageEnglish
Article number04DB04
JournalJapanese journal of applied physics
Volume50
Issue number4 PART 2
DOIs
Publication statusPublished - 2011 Apr 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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