Abstract
Divalent 3d transition metal impurities (V, Cr, Mn, Fe, Co, Ni, and Cu) in KMgF3 and BaLiF3 have been investigated by local-spin-density approximation (LSDA)-based ab initio calculations using an ultrasoft pseudopotential method and a planewave basis set. The results of numerical calculations show that the 3d transition metal impurities exhibit mid-gap levels and that the electronic transition from impurity levels to the conduction band results from the absorption of vacuum ultraviolet (VUV) light with energy lower than band-gap width. Therefore, 3d transition metal contaminations in KMgF3 and BaLiF3 should be avoided for VUV lithographic lens applications.
Original language | English |
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Pages (from-to) | 5082-5085 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 42 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2003 Aug |
Externally published | Yes |
Keywords
- Ab initio calculation
- Fluoroperovskite
- LSDA
- Lens
- Lithography
- Perovskite-like fluoride
- Vacuum-ultraviolet-transparent
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)