Ab initio calculation of F atom desorption in tungsten chemical vapor deposition process using WF 6 and H 2

Kazuhito Nishitani, Shigeyuki Takagi, Masaaki Kanoh, Toshiyuki Yokosuka, Katsumi Sasata, Tomonori Kusagaya, Seiichi Takami, Momoji Kubo, Akira Miyamoto

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Chemical vapor deposition (CVD) of tungsten is widely used in semiconductor devices. In this process, although many atoms are expected to adsorb on a surface during the deposition, the behavior of these atoms has not been understood well. In this study, we have first investigated the reduction step of F adsorbates by H adsorbates on a W surface by density functional theory. The calculated reaction heat (36.5 kcal/mol) is in good agreement with the experimentally estimated value.

Original languageEnglish
Pages (from-to)5751-5752
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number9 A
Publication statusPublished - 2003 Sep 1

Keywords

  • Activation energy
  • CVD
  • Density functional theory
  • Tungsten

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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