Ab initio calculation of F atom desorption in tungsten chemical vapor deposition process using WF6 and H2

Kazuhito Nishitani, Shigeyuki Takagi, Masaaki Kanoh, Toshiyuki Yokosuka, Katsumi Sasata, Tomonori Kusagaya, Seiichi Takami, Momoji Kubo, Akira Miyamoto

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Chemical vapor deposition (CVD) of tungsten is widely used in semiconductor devices. In this process, although many atoms are expected to adsorb on a surface during the deposition, the behavior of these atoms has not been understood well. In this study, we have first investigated the reduction step of F adsorbates by H adsorbates on a W surface by density functional theory. The calculated reaction heat (36.5 kcal/mol) is in good agreement with the experimentally estimated value.

Original languageEnglish
Pages (from-to)5751-5752
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number9 A
DOIs
Publication statusPublished - 2003 Sep

Keywords

  • Activation energy
  • CVD
  • Density functional theory
  • Tungsten

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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