A wide GaAs/GaAlAs quantum well simultaneously containing two dimensional electrons and holes

Ane Jensen, Magdalena Utko, Poul Erik Lindelof, Kei Takashina, Yoshiro Hirayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report on a novel 200 nm wide GaAs/GaAlAs quantum well, which can contain either electrons or holes. The structure has a p-doped layer above the quantum well, and a superlattice (AlAs/GaAs) barrier below shielding the quantum well from the highly n-doped 311A GaAs substrate, which acts as a back-gate. p-Hall bars are fabricated with ohmic Au/Zn p-contacts, and n-Hall bars are fabricated by etching away the p-doped top layer and applying ohmic Au/Ge/Ni contacts. There is an overlapping region of the back-gate voltage where a two dimensional electron gas is induced in the n-Hall bars and a two dimensional hole gas still exists in the p-Hall bars. This unique system allows for devices, where coupling between high quality electron and hole gases is controlled by the back-gate.

Original languageEnglish
Title of host publicationMS+S 2006 - Controllable Quantum States
Subtitle of host publicationMesoscopic Superconductivity and Spintronics, Proceedings of the International Symposium
PublisherWorld Scientific Publishing Co. Pte Ltd
Pages277-281
Number of pages5
ISBN (Print)9812814612, 9789812814616
Publication statusPublished - 2008 Jan 1
Externally publishedYes
Event4th International Symposium on Mesoscopic Superconductivity and Spintronics, MS+S 2006 - Atsugi, Japan
Duration: 2006 Feb 272006 Mar 2

Publication series

NameMS+S 2006 - Controllable Quantum States: Mesoscopic Superconductivity and Spintronics, Proceedings of the International Symposium

Other

Other4th International Symposium on Mesoscopic Superconductivity and Spintronics, MS+S 2006
CountryJapan
CityAtsugi
Period06/2/2706/3/2

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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