TY - GEN
T1 - A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors
AU - Ide, Noriko
AU - Woonghee, Lee
AU - Akahane, Nana
AU - Sugawa, Shigetoshi
PY - 2007
Y1 - 2007
N2 - A 1/3-inch, 800H × 600v pixels, 5.6 × 5.6 μm2 color CMOS image sensor with three photocurrent integrations in pixel photodiodes, pixel lateral overflow capacitors and column capacitors fabricated in a 0.18 μm 2P3M CMOS process has been reported. It achieves high S/N ratio and fully linear response and over 180 dB dynamic range performances in the incident light range from about 1.4×10-2 lx to about 2.4×107 lx.
AB - A 1/3-inch, 800H × 600v pixels, 5.6 × 5.6 μm2 color CMOS image sensor with three photocurrent integrations in pixel photodiodes, pixel lateral overflow capacitors and column capacitors fabricated in a 0.18 μm 2P3M CMOS process has been reported. It achieves high S/N ratio and fully linear response and over 180 dB dynamic range performances in the incident light range from about 1.4×10-2 lx to about 2.4×107 lx.
UR - http://www.scopus.com/inward/record.url?scp=44849105004&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=44849105004&partnerID=8YFLogxK
U2 - 10.1109/ESSCIRC.2007.4430312
DO - 10.1109/ESSCIRC.2007.4430312
M3 - Conference contribution
AN - SCOPUS:44849105004
SN - 1424411254
SN - 9781424411252
T3 - ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference
SP - 336
EP - 339
BT - ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference
T2 - ESSCIRC 2007 - 33rd European Solid-State Circuits Conference
Y2 - 11 September 2007 through 13 September 2007
ER -