A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors

Noriko Ide; Lee Woonghee; Nana Akahane; Shigetoshi Sugawa

doi:10.1109/ESSCIRC.2007.4430312

A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors

Noriko Ide, Lee Woonghee, Nana Akahane, Shigetoshi Sugawa

ENG - Management Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

A 1/3-inch, 800^H × 600^v pixels, 5.6 × 5.6 μm² color CMOS image sensor with three photocurrent integrations in pixel photodiodes, pixel lateral overflow capacitors and column capacitors fabricated in a 0.18 μm 2P3M CMOS process has been reported. It achieves high S/N ratio and fully linear response and over 180 dB dynamic range performances in the incident light range from about 1.4×10^-2 lx to about 2.4×10⁷ lx.

Original language	English
Title of host publication	ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference
Pages	336-339
Number of pages	4
DOIs	https://doi.org/10.1109/ESSCIRC.2007.4430312
Publication status	Published - 2007 Dec 1
Event	ESSCIRC 2007 - 33rd European Solid-State Circuits Conference - Munich, Germany Duration: 2007 Sep 11 → 2007 Sep 13

Publication series

Name	ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference

Other

Other	ESSCIRC 2007 - 33rd European Solid-State Circuits Conference
Country	Germany
City	Munich
Period	07/9/11 → 07/9/13

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/ESSCIRC.2007.4430312

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Ide, N., Woonghee, L., Akahane, N., & Sugawa, S. (2007). A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors. In ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference (pp. 336-339). [4430312] (ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2007.4430312

A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors. / Ide, Noriko; Woonghee, Lee; Akahane, Nana; Sugawa, Shigetoshi.

ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference. 2007. p. 336-339 4430312 (ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ide, N, Woonghee, L, Akahane, N & Sugawa, S 2007, A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors. in ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference., 4430312, ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference, pp. 336-339, ESSCIRC 2007 - 33rd European Solid-State Circuits Conference, Munich, Germany, 07/9/11. https://doi.org/10.1109/ESSCIRC.2007.4430312

Ide N, Woonghee L, Akahane N, Sugawa S. A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors. In ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference. 2007. p. 336-339. 4430312. (ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2007.4430312

Ide, Noriko ; Woonghee, Lee ; Akahane, Nana ; Sugawa, Shigetoshi. / A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors. ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference. 2007. pp. 336-339 (ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference).

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A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors

Abstract

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