A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors

Noriko Ide, Lee Woonghee, Nana Akahane, Shigetoshi Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

A 1/3-inch, 800H × 600v pixels, 5.6 × 5.6 μm2 color CMOS image sensor with three photocurrent integrations in pixel photodiodes, pixel lateral overflow capacitors and column capacitors fabricated in a 0.18 μm 2P3M CMOS process has been reported. It achieves high S/N ratio and fully linear response and over 180 dB dynamic range performances in the incident light range from about 1.4×10-2 lx to about 2.4×107 lx.

Original languageEnglish
Title of host publicationESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference
Pages336-339
Number of pages4
DOIs
Publication statusPublished - 2007 Dec 1
EventESSCIRC 2007 - 33rd European Solid-State Circuits Conference - Munich, Germany
Duration: 2007 Sep 112007 Sep 13

Publication series

NameESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference

Other

OtherESSCIRC 2007 - 33rd European Solid-State Circuits Conference
CountryGermany
CityMunich
Period07/9/1107/9/13

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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