A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors

Noriko Ide; Lee Woonghee; Nana Akahane; Shigetoshi Sugawa

doi:10.1109/ESSCIRC.2007.4430312

A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors

Noriko Ide, Lee Woonghee, Nana Akahane, Shigetoshi Sugawa

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

A 1/3-inch, 800^H × 600^v pixels, 5.6 × 5.6 μm² color CMOS image sensor with three photocurrent integrations in pixel photodiodes, pixel lateral overflow capacitors and column capacitors fabricated in a 0.18 μm 2P3M CMOS process has been reported. It achieves high S/N ratio and fully linear response and over 180 dB dynamic range performances in the incident light range from about 1.4×10^-2 lx to about 2.4×10⁷ lx.

Original language	English
Title of host publication	ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference
Pages	336-339
Number of pages	4
DOIs	https://doi.org/10.1109/ESSCIRC.2007.4430312
Publication status	Published - 2007
Event	ESSCIRC 2007 - 33rd European Solid-State Circuits Conference - Munich, Germany Duration: 2007 Sep 11 → 2007 Sep 13

Publication series

Name	ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference

Other

Other	ESSCIRC 2007 - 33rd European Solid-State Circuits Conference
Country/Territory	Germany
City	Munich
Period	07/9/11 → 07/9/13

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ESSCIRC.2007.4430312

Cite this

Ide, N., Woonghee, L., Akahane, N., & Sugawa, S. (2007). A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors. In ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference (pp. 336-339). [4430312] (ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2007.4430312

A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors. / Ide, Noriko; Woonghee, Lee; Akahane, Nana; Sugawa, Shigetoshi.

ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference. 2007. p. 336-339 4430312 (ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ide, N, Woonghee, L, Akahane, N & Sugawa, S 2007, A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors. in ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference., 4430312, ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference, pp. 336-339, ESSCIRC 2007 - 33rd European Solid-State Circuits Conference, Munich, Germany, 07/9/11. https://doi.org/10.1109/ESSCIRC.2007.4430312

Ide N, Woonghee L, Akahane N, Sugawa S. A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors. In ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference. 2007. p. 336-339. 4430312. (ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2007.4430312

Ide, Noriko ; Woonghee, Lee ; Akahane, Nana ; Sugawa, Shigetoshi. / A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors. ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference. 2007. pp. 336-339 (ESSCIRC 2007 - Proceedings of the 33rd European Solid-State Circuits Conference).

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A wide DR and linear response CMOS image sensor with three photocurrent integrations in photodiodes, lateral overflow capacitors and column capacitors

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