A very wide spectrum superluminescent diode at 1.3 μm

Osamu Mikami, Yoshio Noguchi, Hiroshi Yasaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An approach that broadens the emission spectral width of superluminescent diodes (SLDs) is proposed. The fabrication of 1.3-μm InGaAsP/InP SLDs incorporating a structure of tandem active layers is described. For this device, the spectral width is broadened over 100 nm, achieving a short coherence length of 9.2 μm, one-fourth that of conventional 1.3-μm SLDs.

Original languageEnglish
Title of host publicationThird Int Conf Indium Phosphide Relat Mater
PublisherPubl by IEEE
Pages212-215
Number of pages4
ISBN (Print)0879426268
Publication statusPublished - 1991 Dec 1
Externally publishedYes
EventThird International Conference on Indium Phosphide and Related Materials - Cardiff, Wales
Duration: 1991 Apr 81991 Apr 11

Publication series

NameThird Int Conf Indium Phosphide Relat Mater

Other

OtherThird International Conference on Indium Phosphide and Related Materials
CityCardiff, Wales
Period91/4/891/4/11

ASJC Scopus subject areas

  • Engineering(all)

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