A very low dark current temperature-resistant, wide dynamic range, complementary metal oxide semiconductor image sensor

Koichi Mizobuchi, Satoru Adachi, Jose Tejada, Hiromichi Oshikubo, Nana Akahane, Shigetoshi Sugawa

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A very low dark current (VLDC) temperature-resistant approach which best suits a wide dynamic range (WDR) complementary metal oxide semiconductor (CMOS) image sensor with a lateral over-flow integration capacitor (LOFIC) has been developed. By implementing a low electric field photodiode without a trade-off of full well-capacity, reduced plasma damage, re-crystallization, and termination of silicon-silicon dioxide interface states in the front end of line and back end of line (FEOL and BEOL) in a 0.18 μm, two polycrystalline silicon, three metal (2P3M) process, the dark current is reduced to 11 e -/s/pixel (0.35e-/s/μm2: pixel area normalized) at 60°C, which is the lowest value ever reported. For further robustness at low and high temperatures, 1/3-in., 5.6-μm pitch, 800 × 600 pixel sensor chips with low noise readout circuits designed for a signal and noise hold circuit and a programmable gain amplifier (PGA) have also been deposited with an inorganic cap layer on a micro-lens and covered with a metal hermetically sealed package assembly. Image sensing performance results in 2.4e-rms temporal noise and 100 dB dynamic range (PR) with 237 ke- full well-capacity. The operating temperature range is extended from -40 to 85 °C while retaining good image quality.

Original languageEnglish
Pages (from-to)5390-5395
Number of pages6
JournalJapanese journal of applied physics
Volume47
Issue number7 PART 1
DOIs
Publication statusPublished - 2008 Jul 11

Keywords

  • CMOS image sensor
  • Dark current
  • Low noise
  • Temperature resistant
  • Wide dynamic range

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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