@inproceedings{4ccc705260cc4fd2be062d222d2dec68,
title = "A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack",
abstract = "In this work, by optimizing the structure and thickness of the on-chip multilayer dielectric stack using SiO 2 and low extinction coefficient Si 3 N 4 with the high UV-light sensitivity photodiode technology, high external Q.E. and high stability to UV-light were both successfully obtained. By changing the structure of on-chip multilayer dielectric stack and film thickness, we obtained the photodiode with the high external Q.E. in the desired UV-light region.",
keywords = "UV-light, high transmittance on-chip multilayer dielectric stack, photodiode",
author = "Y. Koda and R. Kuroda and T. Nakazawa and Y. Nakao and S. Sugawa",
year = "2013",
month = apr,
day = "10",
doi = "10.1117/12.2005574",
language = "English",
isbn = "9780819494320",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Proceedings of SPIE-IS and T Electronic Imaging - Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV",
note = "Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV ; Conference date: 06-02-2013 Through 07-02-2013",
}