A UV Si-photodiode with almost 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack

Y. Koda, R. Kuroda, T. Nakazawa, Y. Nakao, S. Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

In this work, by optimizing the structure and thickness of the on-chip multilayer dielectric stack using SiO 2 and low extinction coefficient Si 3 N 4 with the high UV-light sensitivity photodiode technology, high external Q.E. and high stability to UV-light were both successfully obtained. By changing the structure of on-chip multilayer dielectric stack and film thickness, we obtained the photodiode with the high external Q.E. in the desired UV-light region.

Original languageEnglish
Title of host publicationProceedings of SPIE-IS and T Electronic Imaging - Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV
DOIs
Publication statusPublished - 2013 Apr 10
EventSensors, Cameras, and Systems for Industrial and Scientific Applications XIV - Burlingame, CA, United States
Duration: 2013 Feb 62013 Feb 7

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8659
ISSN (Print)0277-786X

Other

OtherSensors, Cameras, and Systems for Industrial and Scientific Applications XIV
CountryUnited States
CityBurlingame, CA
Period13/2/613/2/7

Keywords

  • UV-light
  • high transmittance on-chip multilayer dielectric stack
  • photodiode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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