Abstract
A unified single-equation approach for the MOS transistor drain current modeling for energy-efficient submicron MOS circuits is presented. Instead of three sets of separate equations for the triode, saturation, and weak inversion regions, only a continuous expression which is valid to describe the behavior of drain current and the derivatives in all operation regions can be realized by using a combination of hyperbola, sigmoid, and interpolation methods. The model expression can predict accurate results for the current, output conductance, and transconduclance with continuous and smooth characteristics. The simulation results agree well with experimental data.
Original language | English |
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Pages (from-to) | 107-118 |
Number of pages | 12 |
Journal | Analog Integrated Circuits and Signal Processing |
Volume | 12 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1997 Jan 1 |
ASJC Scopus subject areas
- Signal Processing
- Hardware and Architecture
- Surfaces, Coatings and Films