A Unified Approach to Submicron DC MOS Transistor Modeling for Low-Voltage ICs

Steve H. Jen; Bing J. Sheu; Yoichi Oshima

doi:10.1023/A:1008212908346

A Unified Approach to Submicron DC MOS Transistor Modeling for Low-Voltage ICs

Steve H. Jen, Bing J. Sheu, Yoichi Oshima

Center for Innovative Integrated Electronic Systems (CIES)

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A unified single-equation approach for the MOS transistor drain current modeling for energy-efficient submicron MOS circuits is presented. Instead of three sets of separate equations for the triode, saturation, and weak inversion regions, only a continuous expression which is valid to describe the behavior of drain current and the derivatives in all operation regions can be realized by using a combination of hyperbola, sigmoid, and interpolation methods. The model expression can predict accurate results for the current, output conductance, and transconduclance with continuous and smooth characteristics. The simulation results agree well with experimental data.

Original language	English
Pages (from-to)	107-118
Number of pages	12
Journal	Analog Integrated Circuits and Signal Processing
Volume	12
Issue number	2
DOIs	https://doi.org/10.1023/A:1008212908346
Publication status	Published - 1997 Jan 1

ASJC Scopus subject areas

Signal Processing
Hardware and Architecture
Surfaces, Coatings and Films

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abstract = "A unified single-equation approach for the MOS transistor drain current modeling for energy-efficient submicron MOS circuits is presented. Instead of three sets of separate equations for the triode, saturation, and weak inversion regions, only a continuous expression which is valid to describe the behavior of drain current and the derivatives in all operation regions can be realized by using a combination of hyperbola, sigmoid, and interpolation methods. The model expression can predict accurate results for the current, output conductance, and transconduclance with continuous and smooth characteristics. The simulation results agree well with experimental data.",

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AU - Oshima, Yoichi

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AB - A unified single-equation approach for the MOS transistor drain current modeling for energy-efficient submicron MOS circuits is presented. Instead of three sets of separate equations for the triode, saturation, and weak inversion regions, only a continuous expression which is valid to describe the behavior of drain current and the derivatives in all operation regions can be realized by using a combination of hyperbola, sigmoid, and interpolation methods. The model expression can predict accurate results for the current, output conductance, and transconduclance with continuous and smooth characteristics. The simulation results agree well with experimental data.

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