A two-dimensional thermal oxidation simulator using visco-elastic stress analysis

N. Saito, H. Miura, S. Sakata, M. Ikegawa, T. Shimizu, H. Masuda

Research output: Contribution to journalConference articlepeer-review

14 Citations (Scopus)


A two-dimensional thermal oxidation process simulation program, OXSIM2D, has been developed, taking into account viscoelastic material properties. Novel models for oxidation, stress dependency, and the white ribbon effect are introduced. The proposed approach can be used to analyze SiO2 growth on Si surfaces and the change in stress in the total structure, including the Si substrate. Simulation results showed good agreement with experiments for both a LOCOS and a shallow trench structure.

Original languageEnglish
Pages (from-to)695-698
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1989 Dec 1
Externally publishedYes
Event1989 International Electron Devices Meeting - Technical Digest - Washington, DC, USA
Duration: 1989 Dec 31989 Dec 6

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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