## Abstract

A theory for scanning nonlinear dielectric microscopy (SNDM) and its application to the quantitative evaluation of the linear and nonlinear dielectric constants of dielectric materials are described. First, a general theorem for the capacitance variation under an applied electric field is derived and a capacitance variation susceptibility S_{nl}, which is a very useful parameter for the quantitative measurement of nonlinear dielectric constants, is defined. This S_{nl} is independent of the tip radius, and therefore the sensitivity of the SNDM probe does not change, even if a tip with a smaller radius is selected to obtain a finer resolution. Using the theoretical results and the data taken by SNDM, the quantitative linear and nonlinear dielectric properties of several dielectric materials were successfully determined. From the calculation of a one-dimensional image of a 180° c-c domain boundary, it is demonstrated that the SNDM has an atomic scale resolution.

Original language | English |
---|---|

Pages | 991-994 |

Number of pages | 4 |

Publication status | Published - 2000 Dec 1 |

Event | 12th IEEE International Symposium on Applications of Ferroelectrics - Honolulu, HI, United States Duration: 2000 Jul 21 → 2000 Aug 2 |

### Other

Other | 12th IEEE International Symposium on Applications of Ferroelectrics |
---|---|

Country/Territory | United States |

City | Honolulu, HI |

Period | 00/7/21 → 00/8/2 |

## ASJC Scopus subject areas

- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering