A theoretical analysis of mid-gap states of MgO protecting layer in PDP

A. Endou, H. Kikuchi, H. Tsuboi, M. Koyama, H. Takaba, M. Kubo, C. A. Del Carpio, H. Kajiyama, T. Shinoda, A. Miyamoto

Research output: Contribution to conferencePaperpeer-review

4 Citations (Scopus)


Our original tight-binding quantum chemical molecular dynamics (QCMD) simulator was applied to the analysis of the mid-gap states of the undoped MgO with and without the oxygen defects and of doped MgO protecting layer in PDP. Our method successfully reproduced the experiment regarding dopant levels as well as the mid-gap level in MgO model with the oxygen defects. This indicates that our method is a very effective tool for the detail analysis of the electronic structures of MgO protecting layer.

Original languageEnglish
Number of pages4
Publication statusPublished - 2006 Dec 1
Event13th International Display Workshops, IDW '06 - Otsu, Japan
Duration: 2006 Dec 62006 Dec 6


Other13th International Display Workshops, IDW '06

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Atomic and Molecular Physics, and Optics


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