A theoretical analysis of electromigration failure in aluminum interconnections

Takenao Nemoto, A. Toshimitsu Yokobori, Tsutomu Murakawa

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)


    Electromigration was analyzed mathematically by solving Huntington's equation. A general solution assuming steady-state conditions was derived by Fourier transformation and complex integration. The analysis revealed that a significant accumulation of atoms at the anode induced hillock formation, and that atomic depletion at the cathode induced void formation. An electromigration acceleration test was performed to observe void formation using Al-0.5%Cu-1.0%Si on a SiO2/Si substrate. Experimental results of in situ observation were in good agreement with the theoretical result. The effect of a local stress field on void formation is discussed.

    Original languageEnglish
    Pages (from-to)5716-5719
    Number of pages4
    JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    Issue number7
    Publication statusPublished - 2006 Jul 7


    • Electromigration
    • LSI
    • Mathematical analysis

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)


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