A theoretical analysis of electromigration failure in aluminum interconnections

Takenao Nemoto, A. Toshimitsu Yokobori, Tsutomu Murakawa

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

Electromigration was analyzed mathematically by solving Huntington's equation. A general solution assuming steady-state conditions was derived by Fourier transformation and complex integration. The analysis revealed that a significant accumulation of atoms at the anode induced hillock formation, and that atomic depletion at the cathode induced void formation. An electromigration acceleration test was performed to observe void formation using Al-0.5%Cu-1.0%Si on a SiO2/Si substrate. Experimental results of in situ observation were in good agreement with the theoretical result. The effect of a local stress field on void formation is discussed.

Original languageEnglish
Pages (from-to)5716-5719
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number7
DOIs
Publication statusPublished - 2006 Jul 7
Externally publishedYes

Keywords

  • Electromigration
  • LSI
  • Mathematical analysis

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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