A test structure for statistical evaluation of pn junction leakage current based on CMOS image sensor technology

Kenichi Abe, Takafumi Fujisawa, Hiroyoshi Suzuki, Shunichi Watabe, Rihito Kuroda, Shigetoshi Sugawa, Akinobu Teramoto, Tadahiro Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We propose a test structure to enable us to evaluate statistical distributions of small pn junction leakage currents of numerous samples in a very short time (0.1 - 10 fA, 28,672 n+/p diodes in 0.77s). This test structure is based on a CMOS active pixel image sensor, which contains a current-to-voltage conversion function by a capacitor and amplifiers of voltage signals in each pixel. The test structure can be designed easily because of a small number of mask layer requirements (at least one metal layer). Its simplicity has considerable benefits such as an easy fabrication for various processes without exceptional cares and also produces usefulness of statistical evaluation for anomalous pn junction leakage phenomena such as extremely large currents or dynamic and quantum fluctuations which show more and more as the device dimension shrinks.

Original languageEnglish
Title of host publication2010 International Conference on Microelectronic Test Structures, 23rd IEEE ICMTS Conference Proceedings
Pages18-22
Number of pages5
DOIs
Publication statusPublished - 2010 Jun 29
Event2010 International Conference on Microelectronic Test Structures, ICMTS 2010 - Hiroshima, Japan
Duration: 2010 Mar 222010 Mar 25

Publication series

NameIEEE International Conference on Microelectronic Test Structures

Other

Other2010 International Conference on Microelectronic Test Structures, ICMTS 2010
CountryJapan
CityHiroshima
Period10/3/2210/3/25

Keywords

  • CMOS active pixel image sensor
  • MOSFETs
  • Statistical evaluation
  • pn junction leakage currents

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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