A test structure for statistical evaluation of characteristics variability in a very large number of MOSFETs

S. Watabe, S. Sugawa, K. Abe, T. Fujisawa, N. Miyamoto, A. Teramoto, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

We have proposed and developed a test structure for evaluating electrical characteristics variability of a large number of MOSFETs in very short time using very simple circuit structure. The electrical characteristics such as threshold voltage, subthreshold swings (S-factors, random telegraph signal noise, and so on, can be measured in over one million MOSFETs. This new test structure circuit and results measured by this circuit are very efficient in developing processes, process equipment and device structure which suppress variability.

Original languageEnglish
Title of host publicationICMTS 2009 - 2009 IEEE International Conference on Microelectronic Test Structures
Pages114-118
Number of pages5
DOIs
Publication statusPublished - 2009
Event2009 IEEE International Conference on Microelectronic Test Structures, ICMTS 2009 - Oxnard, CA, United States
Duration: 2009 Mar 302009 Apr 2

Publication series

NameIEEE International Conference on Microelectronic Test Structures

Other

Other2009 IEEE International Conference on Microelectronic Test Structures, ICMTS 2009
CountryUnited States
CityOxnard, CA
Period09/3/3009/4/2

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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