TY - GEN
T1 - A test structure for statistical evaluation of characteristics variability in a very large number of MOSFETs
AU - Watabe, S.
AU - Sugawa, S.
AU - Abe, K.
AU - Fujisawa, T.
AU - Miyamoto, N.
AU - Teramoto, A.
AU - Ohmi, T.
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2009
Y1 - 2009
N2 - We have proposed and developed a test structure for evaluating electrical characteristics variability of a large number of MOSFETs in very short time using very simple circuit structure. The electrical characteristics such as threshold voltage, subthreshold swings (S-factors, random telegraph signal noise, and so on, can be measured in over one million MOSFETs. This new test structure circuit and results measured by this circuit are very efficient in developing processes, process equipment and device structure which suppress variability.
AB - We have proposed and developed a test structure for evaluating electrical characteristics variability of a large number of MOSFETs in very short time using very simple circuit structure. The electrical characteristics such as threshold voltage, subthreshold swings (S-factors, random telegraph signal noise, and so on, can be measured in over one million MOSFETs. This new test structure circuit and results measured by this circuit are very efficient in developing processes, process equipment and device structure which suppress variability.
UR - http://www.scopus.com/inward/record.url?scp=67650177499&partnerID=8YFLogxK
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U2 - 10.1109/ICMTS.2009.4814622
DO - 10.1109/ICMTS.2009.4814622
M3 - Conference contribution
AN - SCOPUS:67650177499
SN - 9781424442591
T3 - IEEE International Conference on Microelectronic Test Structures
SP - 114
EP - 118
BT - ICMTS 2009 - 2009 IEEE International Conference on Microelectronic Test Structures
T2 - 2009 IEEE International Conference on Microelectronic Test Structures, ICMTS 2009
Y2 - 30 March 2009 through 2 April 2009
ER -