A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s

Y. Kumagai, T. Inatsuka, R. Kuroda, A. Teramoto, T. Suwa, S. Sugawa, T. Ohmi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We propose a test circuit which can evaluate statistical characteristics of gate leakage current in a very short time with high accuracy (10 17 - 10 17 A, 87344 samples in 80 s). The absolute value of the gate leakage current is verified and the repeatability error is 110 18 A. Using the test circuit, random telegraph signal of the gate leakage current and stress induced leakage current are evaluated statistically.

Original languageEnglish
Title of host publicationICMTS 2012 - 2012 IEEE International Conference on Microelectronic Test Structures
Pages131-136
Number of pages6
DOIs
Publication statusPublished - 2012 May 24
Event2012 IEEE International Conference on Microelectronic Test Structures, ICMTS 2012 - San Diego, CA, United States
Duration: 2012 Mar 202012 Mar 22

Publication series

NameIEEE International Conference on Microelectronic Test Structures

Other

Other2012 IEEE International Conference on Microelectronic Test Structures, ICMTS 2012
CountryUnited States
CitySan Diego, CA
Period12/3/2012/3/22

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Kumagai, Y., Inatsuka, T., Kuroda, R., Teramoto, A., Suwa, T., Sugawa, S., & Ohmi, T. (2012). A test circuit for extremely low gate leakage current measurement of 10 aA for 80,000 MOSFETs in 80 s. In ICMTS 2012 - 2012 IEEE International Conference on Microelectronic Test Structures (pp. 131-136). [6190631] (IEEE International Conference on Microelectronic Test Structures). https://doi.org/10.1109/ICMTS.2012.6190631