Abstract
We discuss the measurement accuracy of the test circuit, which can evaluate statistical characteristics of gate leakage current of small area metal-oxide-semiconductor field-effect transistors (MOSFETs) in a very short time. The accuracy and precision of the gate leakage current obtained by the test circuit are verified for a wide range. As a result it is confirmed that very accurate gate current of 10-17 A±10\% is able to be measured with this method. Using this test circuit, we can evaluate the gate leakage current at a wide electric field range, which is important in discussing the conduction mechanism of gate leakage current.
Original language | English |
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Article number | 6512020 |
Pages (from-to) | 288-295 |
Number of pages | 8 |
Journal | IEEE Transactions on Semiconductor Manufacturing |
Volume | 26 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2013 |
Keywords
- Electrical stress
- MOSFET
- gate leakage current
- low current measurement
- statistical evaluation
- test circuit
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering