A test circuit for extremely low gate leakage current measurement of 10 aA for 80 000 MOSFETs in 80 s

Takuya Inatsuka; Yuki Kumagai; Rihito Kuroda; Akinobu Teramoto; Tomoyuki Suwa; Shigetoshi Sugawa; Tadahiro Ohmi

doi:10.1109/TSM.2013.2260568

A test circuit for extremely low gate leakage current measurement of 10 aA for 80 000 MOSFETs in 80 s

Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We discuss the measurement accuracy of the test circuit, which can evaluate statistical characteristics of gate leakage current of small area metal-oxide-semiconductor field-effect transistors (MOSFETs) in a very short time. The accuracy and precision of the gate leakage current obtained by the test circuit are verified for a wide range. As a result it is confirmed that very accurate gate current of 10^-17 A±10\% is able to be measured with this method. Using this test circuit, we can evaluate the gate leakage current at a wide electric field range, which is important in discussing the conduction mechanism of gate leakage current.

Original language	English
Article number	6512020
Pages (from-to)	288-295
Number of pages	8
Journal	IEEE Transactions on Semiconductor Manufacturing
Volume	26
Issue number	3
DOIs	https://doi.org/10.1109/TSM.2013.2260568
Publication status	Published - 2013

Keywords

Electrical stress
MOSFET
gate leakage current
low current measurement
statistical evaluation
test circuit

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/TSM.2013.2260568

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A test circuit for extremely low gate leakage current measurement of 10 aA for 80 000 MOSFETs in 80 s. / Inatsuka, Takuya; Kumagai, Yuki; Kuroda, Rihito; Teramoto, Akinobu; Suwa, Tomoyuki ; Sugawa, Shigetoshi; Ohmi, Tadahiro.

In: IEEE Transactions on Semiconductor Manufacturing, Vol. 26, No. 3, 6512020, 2013, p. 288-295.

Research output: Contribution to journal › Article › peer-review

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AU - Inatsuka, Takuya

AU - Kumagai, Yuki

AU - Kuroda, Rihito

AU - Teramoto, Akinobu

AU - Suwa, Tomoyuki

AU - Sugawa, Shigetoshi

AU - Ohmi, Tadahiro

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A test circuit for extremely low gate leakage current measurement of 10 aA for 80 000 MOSFETs in 80 s

Abstract

Keywords

ASJC Scopus subject areas

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