A test circuit for extremely low gate leakage current measurement of 10 aA for 80 000 MOSFETs in 80 s

Takuya Inatsuka, Yuki Kumagai, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

We discuss the measurement accuracy of the test circuit, which can evaluate statistical characteristics of gate leakage current of small area metal-oxide-semiconductor field-effect transistors (MOSFETs) in a very short time. The accuracy and precision of the gate leakage current obtained by the test circuit are verified for a wide range. As a result it is confirmed that very accurate gate current of 10-17 A±10\% is able to be measured with this method. Using this test circuit, we can evaluate the gate leakage current at a wide electric field range, which is important in discussing the conduction mechanism of gate leakage current.

Original languageEnglish
Article number6512020
Pages (from-to)288-295
Number of pages8
JournalIEEE Transactions on Semiconductor Manufacturing
Volume26
Issue number3
DOIs
Publication statusPublished - 2013

Keywords

  • Electrical stress
  • MOSFET
  • gate leakage current
  • low current measurement
  • statistical evaluation
  • test circuit

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'A test circuit for extremely low gate leakage current measurement of 10 aA for 80 000 MOSFETs in 80 s'. Together they form a unique fingerprint.

Cite this