A Ta/Mo interdiffusion dual metal gate technology for drivability enhancement of FinFETs

Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi O'uchi, Yuki Ishikawa, Hiromi Yamauchi, Junichi Tsukada, Kenichi Ishii, Meishoku Masahara, Kunihiro Sakamoto, Eiichi Suzuki

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A Ta/Mo interdiffusion dual metal gate technology was successfully introduced to FinFET fabrication. The advantage of the proposed technology was examined by using the gate-first process without a metal-etch off step. The Ta/Mo gated nMOS FinFET with a reduced threshold voltage (Vth) and the Mo gated pMOS FinFET exhibited symmetrical values of (Vth) (0.31/-0.36 V), which are desirable for the FinFET CMOS circuit operation with enhanced current drivability. It was also confirmed that the Ta/Mo interdiffusion process causes no degradation in the carrier mobility.

Original languageEnglish
Pages (from-to)618-620
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number6
DOIs
Publication statusPublished - 2008 Jun 1
Externally publishedYes

Keywords

  • CMOSFET
  • Dual metal gate
  • FinFET
  • Interdiffusion
  • Molybdenum (Mo)
  • Tantalum (Ta)
  • Work function (WF)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Matsukawa, T., Endo, K., Liu, Y., O'uchi, S., Ishikawa, Y., Yamauchi, H., Tsukada, J., Ishii, K., Masahara, M., Sakamoto, K., & Suzuki, E. (2008). A Ta/Mo interdiffusion dual metal gate technology for drivability enhancement of FinFETs. IEEE Electron Device Letters, 29(6), 618-620. https://doi.org/10.1109/LED.2008.922965