A table-top formation of bilayer quasi-free-standing epitaxial-graphene on SiC(0001) by microwave annealing in air

Kwan Soo Kim; Goon Ho Park; Hirokazu Fukidome; Someya Takashi; Iimori Takushi; Komori Fumio; Matsuda Iwao; Maki Suemitsu

doi:10.1016/j.carbon.2018.01.074

A table-top formation of bilayer quasi-free-standing epitaxial-graphene on SiC(0001) by microwave annealing in air

Kwan Soo Kim, Goon Ho Park, Hirokazu Fukidome, Someya Takashi, Iimori Takushi, Komori Fumio, Matsuda Iwao, Maki Suemitsu

Information Devices Division

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We propose an ultrafast synthesis method to obtain quasi-free-standing bilayer epitaxial-graphene (QFSEG) on SiC(0001). By applying a microwave annealing (MWA) in air to a monolayer epitaxial graphene (EG) grown on SiC(0001), the EG's (6√3 × 6√3) R30° reconstructed buffer layer is decoupled from the SiC substrate and becomes the second graphene layer. Oxidation of the SiC surface is suggested as the most likely mechanism of the decoupling, and the electrical properties of this MWA-QFSEG are actually quite similar to those of the QFSEGs formed by conventional annealing in air. The process time has however been reduced by more than one order of magnitude, which will surely contribute to the betterment of the productivity of the EG-based devices.

Original language	English
Pages (from-to)	792-798
Number of pages	7
Journal	Carbon
Volume	130
DOIs	https://doi.org/10.1016/j.carbon.2018.01.074
Publication status	Published - 2018 Apr

Keywords

Epitaxial graphene
Microwave annealing
Oxygen intercalation
Quasi-free-standing graphene

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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10.1016/j.carbon.2018.01.074

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@article{c02a4f84f1c741ae80cc21b09bdb32ef,

title = "A table-top formation of bilayer quasi-free-standing epitaxial-graphene on SiC(0001) by microwave annealing in air",

abstract = "We propose an ultrafast synthesis method to obtain quasi-free-standing bilayer epitaxial-graphene (QFSEG) on SiC(0001). By applying a microwave annealing (MWA) in air to a monolayer epitaxial graphene (EG) grown on SiC(0001), the EG's (6√3 × 6√3) R30° reconstructed buffer layer is decoupled from the SiC substrate and becomes the second graphene layer. Oxidation of the SiC surface is suggested as the most likely mechanism of the decoupling, and the electrical properties of this MWA-QFSEG are actually quite similar to those of the QFSEGs formed by conventional annealing in air. The process time has however been reduced by more than one order of magnitude, which will surely contribute to the betterment of the productivity of the EG-based devices.",

keywords = "Epitaxial graphene, Microwave annealing, Oxygen intercalation, Quasi-free-standing graphene",

author = "Kim, {Kwan Soo} and Park, {Goon Ho} and Hirokazu Fukidome and Someya Takashi and Iimori Takushi and Komori Fumio and Matsuda Iwao and Maki Suemitsu",

note = "Funding Information: This work was supported by JSPS Grant-in-Aid for JSPS fellows ( JP17J04947 ), and KAKENHI ( JP16H00953 ) and KAKENHI ( 17K19065 ). Publisher Copyright: {\textcopyright} 2018 Elsevier Ltd",

year = "2018",

month = apr,

doi = "10.1016/j.carbon.2018.01.074",

language = "English",

volume = "130",

pages = "792--798",

journal = "Carbon",

issn = "0008-6223",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - A table-top formation of bilayer quasi-free-standing epitaxial-graphene on SiC(0001) by microwave annealing in air

AU - Kim, Kwan Soo

AU - Park, Goon Ho

AU - Fukidome, Hirokazu

AU - Takashi, Someya

AU - Takushi, Iimori

AU - Fumio, Komori

AU - Iwao, Matsuda

AU - Suemitsu, Maki

PY - 2018/4

Y1 - 2018/4

N2 - We propose an ultrafast synthesis method to obtain quasi-free-standing bilayer epitaxial-graphene (QFSEG) on SiC(0001). By applying a microwave annealing (MWA) in air to a monolayer epitaxial graphene (EG) grown on SiC(0001), the EG's (6√3 × 6√3) R30° reconstructed buffer layer is decoupled from the SiC substrate and becomes the second graphene layer. Oxidation of the SiC surface is suggested as the most likely mechanism of the decoupling, and the electrical properties of this MWA-QFSEG are actually quite similar to those of the QFSEGs formed by conventional annealing in air. The process time has however been reduced by more than one order of magnitude, which will surely contribute to the betterment of the productivity of the EG-based devices.

AB - We propose an ultrafast synthesis method to obtain quasi-free-standing bilayer epitaxial-graphene (QFSEG) on SiC(0001). By applying a microwave annealing (MWA) in air to a monolayer epitaxial graphene (EG) grown on SiC(0001), the EG's (6√3 × 6√3) R30° reconstructed buffer layer is decoupled from the SiC substrate and becomes the second graphene layer. Oxidation of the SiC surface is suggested as the most likely mechanism of the decoupling, and the electrical properties of this MWA-QFSEG are actually quite similar to those of the QFSEGs formed by conventional annealing in air. The process time has however been reduced by more than one order of magnitude, which will surely contribute to the betterment of the productivity of the EG-based devices.

KW - Epitaxial graphene

KW - Microwave annealing

KW - Oxygen intercalation

KW - Quasi-free-standing graphene

UR - http://www.scopus.com/inward/record.url?scp=85041485454&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85041485454&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2018.01.074

DO - 10.1016/j.carbon.2018.01.074

M3 - Article

AN - SCOPUS:85041485454

SN - 0008-6223

VL - 130

SP - 792

EP - 798

JO - Carbon

JF - Carbon

ER -

A table-top formation of bilayer quasi-free-standing epitaxial-graphene on SiC(0001) by microwave annealing in air

Abstract

Keywords

ASJC Scopus subject areas

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