A table-top formation of bilayer quasi-free-standing epitaxial-graphene on SiC(0001) by microwave annealing in air

Kwan Soo Kim, Goon Ho Park, Hirokazu Fukidome, Someya Takashi, Iimori Takushi, Komori Fumio, Matsuda Iwao, Maki Suemitsu

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We propose an ultrafast synthesis method to obtain quasi-free-standing bilayer epitaxial-graphene (QFSEG) on SiC(0001). By applying a microwave annealing (MWA) in air to a monolayer epitaxial graphene (EG) grown on SiC(0001), the EG's (6√3 × 6√3) R30° reconstructed buffer layer is decoupled from the SiC substrate and becomes the second graphene layer. Oxidation of the SiC surface is suggested as the most likely mechanism of the decoupling, and the electrical properties of this MWA-QFSEG are actually quite similar to those of the QFSEGs formed by conventional annealing in air. The process time has however been reduced by more than one order of magnitude, which will surely contribute to the betterment of the productivity of the EG-based devices.

Original languageEnglish
Pages (from-to)792-798
Number of pages7
JournalCarbon
Volume130
DOIs
Publication statusPublished - 2018 Apr

Keywords

  • Epitaxial graphene
  • Microwave annealing
  • Oxygen intercalation
  • Quasi-free-standing graphene

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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