A surrounding isolation-merged plate electrode (SIMPLE) cell with checkered layout for 256 Mbit DRAMs and beyond

T. Ozaki, A. Nitayama, K. Sunouchi, H. Takato, S. Takedai, A. Yagishita, K. Hieda, F. Horiguchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)


The authors describe a novel cell structure called a surrounding isolation merged plate electrode (SIMPLE) cell. In this cell, close-packed silicon pillars are laid out checker-wise, and a thin isolation-merged plate electrode surrounds the pillars. This cell structure leads to cell area reduction to 50%, trench depth reduction to 50%, and planarization and process step reduction compared with the conventional trench type cell. Using the design rule of 64 Mbit DRAM (dynamic RAM) (0.35 μ m), the SIMPLE cell can achieve a cell area of 256 Mbit DRAM (0.5 μ m2). The SIMPLE cell is an attractive candidate for 256 Mbit DRAMs and beyond.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780302435
Publication statusPublished - 1991 Jan 1
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 1991 Dec 81991 Dec 11

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


OtherInternational Electron Devices Meeting, IEDM 1991
Country/TerritoryUnited States


  • Capacitors
  • Electrodes
  • Etching
  • Fabrication
  • Lithography
  • Oxidation
  • Planarization
  • Random access memory
  • Silicon
  • Ultra large scale integration

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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