A sub-ns three-terminal spin-orbit torque induced switching device

Shunsuke Fukami; Tetsuro Anekawa; Ayato Ohkawara; Chaoliang Zhang; Hideo Ohno

doi:10.1109/VLSIT.2016.7573379

A sub-ns three-terminal spin-orbit torque induced switching device

Shunsuke Fukami, Tetsuro Anekawa, Ayato Ohkawara, Chaoliang Zhang, Hideo Ohno

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Citations (Scopus)

Abstract

We show a three-terminal spintronics memory device, which can be reliably switched by 0.5-ns current pulses with small magnitude. A new device geometry is employed, where spin-orbit torque is used for the write operation. We also show that an improved structure realizes magnetic field-free switching and employing a material other than the standard Ta can lead to a reduction of the switching current by more than half.

Original language	English
Title of host publication	2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509006373
DOIs	https://doi.org/10.1109/VLSIT.2016.7573379
Publication status	Published - 2016 Sep 21
Event	36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 - Honolulu, United States Duration: 2016 Jun 13 → 2016 Jun 16

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2016-September
ISSN (Print)	0743-1562

Other

Other	36th IEEE Symposium on VLSI Technology, VLSI Technology 2016
Country	United States
City	Honolulu
Period	16/6/13 → 16/6/16

Keywords

MRAM
spin-orbit torque
three-terminal device

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/VLSIT.2016.7573379

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Fukami, S., Anekawa, T., Ohkawara, A., Zhang, C., & Ohno, H. (2016). A sub-ns three-terminal spin-orbit torque induced switching device. In 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016 [7573379] (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2016-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2016.7573379

A sub-ns three-terminal spin-orbit torque induced switching device. / Fukami, Shunsuke; Anekawa, Tetsuro; Ohkawara, Ayato; Zhang, Chaoliang ; Ohno, Hideo.

2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7573379 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2016-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Fukami, S, Anekawa, T, Ohkawara, A, Zhang, C & Ohno, H 2016, A sub-ns three-terminal spin-orbit torque induced switching device. in 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016., 7573379, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2016-September, Institute of Electrical and Electronics Engineers Inc., 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016, Honolulu, United States, 16/6/13. https://doi.org/10.1109/VLSIT.2016.7573379

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keywords = "MRAM, spin-orbit torque, three-terminal device",

author = "Shunsuke Fukami and Tetsuro Anekawa and Ayato Ohkawara and Chaoliang Zhang and Hideo Ohno",

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AB - We show a three-terminal spintronics memory device, which can be reliably switched by 0.5-ns current pulses with small magnitude. A new device geometry is employed, where spin-orbit torque is used for the write operation. We also show that an improved structure realizes magnetic field-free switching and employing a material other than the standard Ta can lead to a reduction of the switching current by more than half.

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A sub-ns three-terminal spin-orbit torque induced switching device

Abstract

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Keywords

ASJC Scopus subject areas

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