TY - GEN
T1 - A sub-ns three-terminal spin-orbit torque induced switching device
AU - Fukami, Shunsuke
AU - Anekawa, Tetsuro
AU - Ohkawara, Ayato
AU - Zhang, Chaoliang
AU - Ohno, Hideo
PY - 2016/9/21
Y1 - 2016/9/21
N2 - We show a three-terminal spintronics memory device, which can be reliably switched by 0.5-ns current pulses with small magnitude. A new device geometry is employed, where spin-orbit torque is used for the write operation. We also show that an improved structure realizes magnetic field-free switching and employing a material other than the standard Ta can lead to a reduction of the switching current by more than half.
AB - We show a three-terminal spintronics memory device, which can be reliably switched by 0.5-ns current pulses with small magnitude. A new device geometry is employed, where spin-orbit torque is used for the write operation. We also show that an improved structure realizes magnetic field-free switching and employing a material other than the standard Ta can lead to a reduction of the switching current by more than half.
KW - MRAM
KW - spin-orbit torque
KW - three-terminal device
UR - http://www.scopus.com/inward/record.url?scp=84990889228&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84990889228&partnerID=8YFLogxK
U2 - 10.1109/VLSIT.2016.7573379
DO - 10.1109/VLSIT.2016.7573379
M3 - Conference contribution
AN - SCOPUS:84990889228
T3 - Digest of Technical Papers - Symposium on VLSI Technology
BT - 2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 36th IEEE Symposium on VLSI Technology, VLSI Technology 2016
Y2 - 13 June 2016 through 16 June 2016
ER -