A sub-ns three-terminal spin-orbit torque induced switching device

Shunsuke Fukami, Tetsuro Anekawa, Ayato Ohkawara, Chaoliang Zhang, Hideo Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

We show a three-terminal spintronics memory device, which can be reliably switched by 0.5-ns current pulses with small magnitude. A new device geometry is employed, where spin-orbit torque is used for the write operation. We also show that an improved structure realizes magnetic field-free switching and employing a material other than the standard Ta can lead to a reduction of the switching current by more than half.

Original languageEnglish
Title of host publication2016 IEEE Symposium on VLSI Technology, VLSI Technology 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781509006373
DOIs
Publication statusPublished - 2016 Sep 21
Event36th IEEE Symposium on VLSI Technology, VLSI Technology 2016 - Honolulu, United States
Duration: 2016 Jun 132016 Jun 16

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
Volume2016-September
ISSN (Print)0743-1562

Other

Other36th IEEE Symposium on VLSI Technology, VLSI Technology 2016
CountryUnited States
CityHonolulu
Period16/6/1316/6/16

Keywords

  • MRAM
  • spin-orbit torque
  • three-terminal device

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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