A study on wide RBSOA of 4.5kV power pack IGBT

K. Yoshikawa, T. Koga, T. Fujii, A. Nishiura, Y. Takahashi

Research output: Contribution to conferencePaperpeer-review

9 Citations (Scopus)

Abstract

In this paper, high current turn-off capability of the 4.5kV IGBTs is discussed. The dynamic avalanche phenomenon during a turn-off period limits the RBSOA (Reverse Bias Safety Operating Area) due to high impact ionization rate. It is demonstrated that the wide RBSOA can be realized with even a thin base layer. The newly-designed IGBT has successfully achieved the smaller turn-off dissipation loss and the sufficient RBSOA, simultaneously.

Original languageEnglish
Pages117-120
Number of pages4
Publication statusPublished - 2001 Jan 1
Externally publishedYes
Event13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka, Japan
Duration: 2001 Jun 42001 Jun 7

Other

Other13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01)
CountryJapan
CityOsaka
Period01/6/401/6/7

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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