TY - GEN
T1 - A study on the reliability of the chip surface solder joint
AU - Ikeda, Yoshinari
AU - Iizuka, Yuji
AU - Asai, Tatsuhiko
AU - Goto, Tomoaki
AU - Takahashi, Yoshikazu
PY - 2008/9/17
Y1 - 2008/9/17
N2 - The solder joint reliability of IGBT chip surface interconnection with a lead-frame structure is described in the power cycling (P/C) capability which is greatly improved due to a chip surface cooling effect in comparison with aluminum wire interconnection. The lead-frame is joined on a Ni and Au plated chip surface with Sn-Ag or Sn-Sb system solders. The P/C capability obtained with the Sn-Sb system solder is three times larger than that with the Sn-Ag system solder. Such a good performance comes from the solid solution hardening property of Sn-Sb system solder.
AB - The solder joint reliability of IGBT chip surface interconnection with a lead-frame structure is described in the power cycling (P/C) capability which is greatly improved due to a chip surface cooling effect in comparison with aluminum wire interconnection. The lead-frame is joined on a Ni and Au plated chip surface with Sn-Ag or Sn-Sb system solders. The P/C capability obtained with the Sn-Sb system solder is three times larger than that with the Sn-Ag system solder. Such a good performance comes from the solid solution hardening property of Sn-Sb system solder.
UR - http://www.scopus.com/inward/record.url?scp=51549089578&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=51549089578&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2008.4538930
DO - 10.1109/ISPSD.2008.4538930
M3 - Conference contribution
AN - SCOPUS:51549089578
SN - 1424415322
SN - 9781424415328
T3 - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SP - 189
EP - 192
BT - ISPSD '08, Proceedings of the 20th International Symposium on Power Semiconductor Devices and IC's
T2 - ISPSD '08, 20th International Symposium on Power Semiconductor Devices and IC's
Y2 - 18 May 2008 through 22 May 2008
ER -