A Study on Evaluation of Interface Defect Density on High-K/SiO2/Si and SiO2/Si Gate Stacks using Scanning Nonlinear Dielectric Microscopy

Koharu Suzuki, Kohei Yamasue, Yasuo Cho

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We discuss the feasibility of interface defect density estimation using scanning nonlinear dielectric microscopy (SNDM). With reference to the previous results on SiO2/SiC gate stacks, we evaluate the non-uniformity in the microscopy images of SiO2/Si and high-κ/SiO2/Si gate stacks. The results suggest that a high-κ layer on a SiO2/Si gate stack has little impact on the quality of interface. Our procedure possibly gives a useful method for the nanoscale evaluation of interface quality at gate stacks with Si substrates. We also measure local capacitance voltage (CV) spectrum by newly developed time-resolved SNDM, which show CV spectrum gradually changed during the measurement.

Original languageEnglish
Title of host publication2019 IEEE International Integrated Reliability Workshop, IIRW 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728122038
DOIs
Publication statusPublished - 2019 Oct
Event2019 IEEE International Integrated Reliability Workshop, IIRW 2019 - Fallen Leaf Lake, United States
Duration: 2019 Oct 132019 Oct 17

Publication series

NameIEEE International Integrated Reliability Workshop Final Report
Volume2019-October

Conference

Conference2019 IEEE International Integrated Reliability Workshop, IIRW 2019
CountryUnited States
CityFallen Leaf Lake
Period19/10/1319/10/17

Keywords

  • Scanning nonlinear dielectric microscopy (SNDM)
  • SiO/Si
  • high-k bias temperature instability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality
  • Electronic, Optical and Magnetic Materials

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    Suzuki, K., Yamasue, K., & Cho, Y. (2019). A Study on Evaluation of Interface Defect Density on High-K/SiO2/Si and SiO2/Si Gate Stacks using Scanning Nonlinear Dielectric Microscopy. In 2019 IEEE International Integrated Reliability Workshop, IIRW 2019 [8989881] (IEEE International Integrated Reliability Workshop Final Report; Vol. 2019-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW47491.2019.8989881