A study on B atomic layer formation for B-doped Si1-xGe x(100) epitaxial growth using ultraclean LPCVD system

Kiyohisa Ishibashi, Masao Sakuraba, Junichi Murota, Yasuhiro Inokuchi, Yasuo Kunii, Harushige Kurokawa

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3 Citations (Scopus)


B atomic layer formation on Si1-xGex(100) (x=0, 0.3, 1) using BCl3 gas has been investigated by ultraclean low-pressure chemical vapor deposition. At 450° C, in the case using BCl 3-He-Hz gas mixture, B amount tends to increase beyond one atomic layer (6.8×1014 cm-2) with increasing BCl3 exposure time on Si0.7Ge0.3(100) and Ge(100). On the other hand, in the case using BCl3-He-Ar mixture gas, 1/3-1/2 atomic layer (2.3×1014 cm-2) formation is achieved self-limitedly with high Cl coverage on the surface. The Cl atoms on the B adsorbed Si1-xGex(100) are effectively removed by H2 introduction at 450°C after BCl3 exposure. In this way, atomically-controlled B atomic layer formation on Si1-xGe x(100) was demonstrated by using the self-limited surface reaction of BCl3 at 450 °C. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)861-866
Number of pages6
JournalECS Transactions
Issue number7
Publication statusPublished - 2006 Dec 1
EventSiGe and Ge: Materials, Processing, and Devices - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 2006 Oct 292006 Nov 3

ASJC Scopus subject areas

  • Engineering(all)

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